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Results:
1-13
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Results: 13
Authors:
Vogt, P
Ludge, K
Zorn, M
Pristovsek, M
Braun, W
Richter, W
Esser, N
Citation: P. Vogt et al., Atomic structure and composition of the (2X4) reconstruction of InGaP(001), J VAC SCI B, 18(4), 2000, pp. 2210-2214
Authors:
Pristovsek, M
Menhal, H
Zettler, JT
Richter, W
Citation: M. Pristovsek et al., Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth, APPL SURF S, 166(1-4), 2000, pp. 433-436
Authors:
Vogt, P
Ludge, K
Zorn, M
Pristovsek, M
Braun, W
Richter, W
Esser, N
Citation: P. Vogt et al., Surface structure of ordered InGaP(001): The (2x4) reconstruction, PHYS REV B, 62(19), 2000, pp. 12601-12604
Authors:
Pristovsek, M
Han, B
Zettler, JT
Richter, W
Citation: M. Pristovsek et al., In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J CRYST GR, 221, 2000, pp. 149-155
Authors:
Pristovsek, M
Trepk, T
Klein, M
Zettler, JT
Richter, W
Citation: M. Pristovsek et al., Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption, J APPL PHYS, 87(3), 2000, pp. 1245-1250
Authors:
Esser, N
Schmidt, WG
Bernholc, J
Frisch, AM
Vogt, P
Zorn, M
Pristovsek, M
Richter, W
Bechstedt, F
Hannappel, T
Visbeck, S
Citation: N. Esser et al., GaP(001) and InP(001): Reflectance anisotropy and surface geometry, J VAC SCI B, 17(4), 1999, pp. 1691-1696
Authors:
Haberland, K
Kurpas, P
Pristovsek, M
Zettler, JT
Veyers, M
Richter, W
Citation: K. Haberland et al., Spectroscopic process sensors in MOVPE device production, APPL PHYS A, 68(3), 1999, pp. 309-313
Authors:
Frisch, AM
Schmidt, WG
Bernholc, J
Pristovsek, M
Esser, N
Richter, W
Citation: Am. Frisch et al., (2x4) GaP(001) surface: Atomic structure and optical anisotropy, PHYS REV B, 60(4), 1999, pp. 2488-2494
Authors:
Pristovsek, M
Menhal, H
Schmidtling, T
Esser, N
Richter, W
Citation: M. Pristovsek et al., Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy, MICROELEC J, 30(4-5), 1999, pp. 449-453
Authors:
Pahlke, D
Poser, F
Steimetz, E
Pristovsek, M
Esser, N
Richter, W
Citation: D. Pahlke et al., Photoluminescence scanning near-field optical microscopy on III-V quantum dots, PHYS ST S-A, 170(2), 1998, pp. 401-410
Authors:
Pristovsek, M
Menhal, H
Wehnert, T
Zettler, JT
Schmidtling, T
Esser, N
Richter, W
Setzer, C
Platen, J
Jacobi, K
Citation: M. Pristovsek et al., Reconstructions of the GaAs (1 1 3) surface, J CRYST GR, 195(1-4), 1998, pp. 1-5
Authors:
Zettler, JT
Haberland, K
Zorn, M
Pristovsek, M
Richter, W
Kurpas, P
Weyers, M
Citation: Jt. Zettler et al., Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques, J CRYST GR, 195(1-4), 1998, pp. 151-162
Authors:
Hardtdegen, H
Pristovsek, M
Menhal, H
Zettler, JT
Richter, W
Schmitz, D
Citation: H. Hardtdegen et al., In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere, J CRYST GR, 195(1-4), 1998, pp. 211-216
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1-13
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