Authors:
Pristovsek, M
Menhal, H
Zettler, JT
Richter, W
Citation: M. Pristovsek et al., Diffusion of Ga on the GaAs (113) surface in the [1(1)over-bar-0] direction during MOVPE growth, APPL SURF S, 166(1-4), 2000, pp. 433-436
Authors:
Pristovsek, M
Han, B
Zettler, JT
Richter, W
Citation: M. Pristovsek et al., In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J CRYST GR, 221, 2000, pp. 149-155
Authors:
Pristovsek, M
Trepk, T
Klein, M
Zettler, JT
Richter, W
Citation: M. Pristovsek et al., Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption, J APPL PHYS, 87(3), 2000, pp. 1245-1250
Authors:
Pristovsek, M
Menhal, H
Schmidtling, T
Esser, N
Richter, W
Citation: M. Pristovsek et al., Comparative study of the GaAs (113), (115), (001), ((1)over-bar(1)over-bar(5)over-bar), ((1)over-bar(1)over-bar(3)over-bar), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy, MICROELEC J, 30(4-5), 1999, pp. 449-453
Authors:
Zettler, JT
Haberland, K
Zorn, M
Pristovsek, M
Richter, W
Kurpas, P
Weyers, M
Citation: Jt. Zettler et al., Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques, J CRYST GR, 195(1-4), 1998, pp. 151-162
Authors:
Hardtdegen, H
Pristovsek, M
Menhal, H
Zettler, JT
Richter, W
Schmitz, D
Citation: H. Hardtdegen et al., In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere, J CRYST GR, 195(1-4), 1998, pp. 211-216