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Results:
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Results: 3
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
Authors:
Tilak, V Green, B Kaper, V Kim, H Prunty, T Smart, J Shealy, J Eastman, L
Citation:
V. Tilak et al., Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs, IEEE ELEC D, 22(11), 2001, pp. 504-506
Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates
Authors:
Chumbes, EM Smart, JA Prunty, T Shealy, JR
Citation:
Em. Chumbes et al., Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates, IEEE DEVICE, 48(3), 2001, pp. 416-419
Undoped AlGaN/GaN HEMTs for microwave power amplification
Authors:
Eastman, LF Tilak, V Smart, J Green, BM Chumbes, EM Dimitrov, R Kim, H Ambacher, OS Weimann, N Prunty, T Murphy, M Schaff, WJ Shealy, JR
Citation:
Lf. Eastman et al., Undoped AlGaN/GaN HEMTs for microwave power amplification, IEEE DEVICE, 48(3), 2001, pp. 479-485
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