Authors: Wolkenberg, A Przeslawski, T Kaniewski, J Bak-Misiuk, J Reginski, K

Citation: A. Wolkenberg et al., Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001), MAT SCI E B, 77(3), 2000, pp. 250-254

Authors: Dziuba, Z Gorska, M Marczewski, J Przeslawski, T Reginski, K

Citation: Z. Dziuba et al., Anomalous behavior of the Hall effect in III-V hetero structures, ACT PHY P A, 97(2), 2000, pp. 331-336

Authors: Przeslawski, T Wolkenberg, A Reginski, K Kaniewski, J Bak-Misiuk, J

Citation: T. Przeslawski et al., Growth and transport properties of relaxed epilayers of InAs on GaAs, THIN SOL FI, 367(1-2), 2000, pp. 232-234

Authors: Dziuba, Z Przeslawski, T Dybko, K Gorska, M Marczewski, J Reginski, K

Citation: Z. Dziuba et al., Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure, J APPL PHYS, 85(9), 1999, pp. 6619-6624