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Results: 1-9 |
Results: 9
TESTS OF AN ENVIRONMENTAL AND PERSONNEL SAFE CLEANING PROCESS FOR BROOKHAVEN-NATIONAL-LABORATORY ACCELERATOR AND STORAGE-RING COMPONENTS
Authors: FOERSTER CL LANNI C LEE R MITCHELL G QUADE W
Citation: Cl. Foerster et al., TESTS OF AN ENVIRONMENTAL AND PERSONNEL SAFE CLEANING PROCESS FOR BROOKHAVEN-NATIONAL-LABORATORY ACCELERATOR AND STORAGE-RING COMPONENTS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 731-735
ELECTROMAGNETIC-FIELD INVESTIGATIONS INSIDE A HOLLOW CYLINDER
Authors: WIETING TJ ANDREADIS TD KIDD JM QUADE W NAMENSON AI LIBELLO LF SCHLEISIGER CD BUTLER CM
Citation: Tj. Wieting et al., ELECTROMAGNETIC-FIELD INVESTIGATIONS INSIDE A HOLLOW CYLINDER, Compel, 14(4), 1995, pp. 223-227
LOW-TEMPERATURE BREAKDOWN AND CURRENT FILAMENTATION IN N-TYPE GAAS WITH HOMOGENEOUS AND PARTIALLY ORDERED SI DOPING
Authors: KOSTIAL H ASCHE M HEY R PLOOG K KEHRER B QUADE W SCHOLL E
Citation: H. Kostial et al., LOW-TEMPERATURE BREAKDOWN AND CURRENT FILAMENTATION IN N-TYPE GAAS WITH HOMOGENEOUS AND PARTIALLY ORDERED SI DOPING, Semiconductor science and technology, 10(6), 1995, pp. 775-784
MONTE-CARLO SIMULATION OF IMPACT-IONIZATION-INDUCED BREAKDOWN AND CURRENT FILAMENTATION IN DELTA-DOPED GAAS
Authors: KEHRER B QUADE W SCHOLL E
Citation: B. Kehrer et al., MONTE-CARLO SIMULATION OF IMPACT-IONIZATION-INDUCED BREAKDOWN AND CURRENT FILAMENTATION IN DELTA-DOPED GAAS, Physical review. B, Condensed matter, 51(12), 1995, pp. 7725-7733
QUANTUM-THEORY OF IMPACT IONIZATION IN COHERENT HIGH-FIELD SEMICONDUCTOR TRANSPORT
Authors: QUADE W SCHOLL E ROSSI F JACOBONI C
Citation: W. Quade et al., QUANTUM-THEORY OF IMPACT IONIZATION IN COHERENT HIGH-FIELD SEMICONDUCTOR TRANSPORT, Physical review. B, Condensed matter, 50(11), 1994, pp. 7398-7412
MONTE-CARLO SIMULATION OF THE NONEQUILIBRIUM PHASE-TRANSITION IN P-TYPE GE AT IMPURITY BREAKDOWN
Authors: QUADE W HUPPER G SCHOLL E KUHN T
Citation: W. Quade et al., MONTE-CARLO SIMULATION OF THE NONEQUILIBRIUM PHASE-TRANSITION IN P-TYPE GE AT IMPURITY BREAKDOWN, Physical review. B, Condensed matter, 49(19), 1994, pp. 13408-13419
IMPACT IONIZATION WITHIN THE HYDRODYNAMIC APPROACH TO SEMICONDUCTOR TRANSPORT
Authors: QUADE W SCHOLL E RUDAN M
Citation: W. Quade et al., IMPACT IONIZATION WITHIN THE HYDRODYNAMIC APPROACH TO SEMICONDUCTOR TRANSPORT, Solid-state electronics, 36(10), 1993, pp. 1493-1505
A QUANTUM DESCRIPTION OF IMPACT IONIZATION IN SEMICONDUCTORS
Authors: QUADE W ROSSI F JACOBONI C
Citation: W. Quade et al., A QUANTUM DESCRIPTION OF IMPACT IONIZATION IN SEMICONDUCTORS, Semiconductor science and technology, 7(3B), 1992, pp. 502-505
A MULTIBAND MODEL FOR HOLE TRANSPORT IN SILICON AT HIGH-ENERGIES
Authors: ABRAMO A VENTURI F SANGIORGI E FIEGNA C RICCO B BRUNETTI R QUADE W JACOBONI C
Citation: A. Abramo et al., A MULTIBAND MODEL FOR HOLE TRANSPORT IN SILICON AT HIGH-ENERGIES, Semiconductor science and technology, 7(3B), 1992, pp. 597-600
Risultati: 1-9 |