Authors: LANDHEER D RAJESH K MASSON D HULSE JE SPROULE GI QUANCE T

Citation: D. Landheer et al., FACTORS AFFECTING INTERFACE-STATE DENSITY AND STRESS OF SILICON-NITRIDE FILMS DEPOSITED ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 2931-2940

Authors: LANDHEER D MASSON DP BELKOUCH S DAS SR QUANCE T LEBRUN L HULSE JE

Citation: D. Landheer et al., BACK-SURFACE PASSIVATION OF POLYCRYSTALLINE CDSE THIN-FILM TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 834-837

Authors: BELKOUCH S LANDHEER D MASSON DP DAS SR QUANCE T LEBRUN L ROLFE SJ

Citation: S. Belkouch et al., EFFECTS OF INITIAL ANNEALING TREATMENTS ON THE ELECTRICAL CHARACTERISTICS AND STABILITY OF UNPASSIVATED CDSE THIN-FILM TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 860-863

Authors: LANDHEER D HULSE JE QUANCE T

Citation: D. Landheer et al., FORMATION OF HIGH-QUALITY SILICON DIOXIDE FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION AND PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 293(1-2), 1997, pp. 52-62

Authors: LANDHEER D TAO Y HULSE JE QUANCE T XU DX

Citation: D. Landheer et al., FORMATION OF HIGH-QUALITY NITRIDED SILICON DIOXIDE FILMS USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION WITH NITROUS-OXIDE AND SILANE, Journal of the Electrochemical Society, 143(5), 1996, pp. 1681-1684