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Results:
1-11
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Results: 11
Authors:
Quaresima, C
Cricenti, A
Ottaviani, C
Perfetti, P
Le Lay, G
Citation: C. Quaresima et al., Unambiguous identification of the Si 2p surface core-level shifts in Sb and Ag terminated silicon surfaces studied with high energy resolution photoemission, J ALLOY COM, 328(1-2), 2001, pp. 187-192
Authors:
De Padova, P
Larciprete, R
Quaresima, C
Gunnella, R
Reginelli, A
Ferrari, L
Perfetti, P
Yu-Zhang, K
Leprince-Wang, Y
Citation: P. De Padova et al., High resolution photoemission core level spectroscopy study and TEM analysis of the Ge/As/Si(001) growth, SURF SCI, 482, 2001, pp. 574-579
Authors:
De Padova, P
Quaresima, C
Perfetti, P
Larciprete, R
Brochier, R
Richter, C
Ilakovac, V
Bencok, P
Teodorescu, C
Aristov, VY
Johnson, RL
Hricovini, K
Citation: P. De Padova et al., Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface, SURF SCI, 482, 2001, pp. 587-592
Authors:
De Padova, P
Larciprete, R
Quaresima, C
Reginelli, A
Perfetti, P
Citation: P. De Padova et al., Temperature effect on the reconstruction of Sb/Si(001) interface studied by high resolution core level spectroscopy and RHEED analysis, APPL SURF S, 166(1-4), 2000, pp. 214-219
Authors:
Cricenti, A
Ottaviani, C
Comicioli, C
Crotti, C
Ferrari, L
Quaresima, C
Perfetti, P
Le Lay, G
Citation: A. Cricenti et al., Sb-terminated Si(110), Si(100) and Si(111) surfaces studied with high resolution core-level spectroscopy, APPL SURF S, 162, 2000, pp. 380-383
Authors:
Cricenti, A
Quaresima, C
Ottaviani, C
Ferrari, L
Perfetti, P
Crotti, C
Le Lay, G
Margaritondo, G
Citation: A. Cricenti et al., Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer, PHYS REV B, 62(15), 2000, pp. 9931-9934
Authors:
Larciprete, R
De Padova, P
Quaresima, C
Ottaviani, C
Perfetti, P
Peloi, M
Citation: R. Larciprete et al., Ge/Si(001)c(4X2) interface formation studied by high-resolution Ge 3d and Si 2p core-level spectroscopy, PHYS REV B, 61(23), 2000, pp. 16006-16014
Authors:
De Padova, P
Larciprete, R
Quaresima, C
Reginelli, A
Perfetti, P
Citation: P. De Padova et al., Strained Ge/Si(001) interface in the presence of Bi and Sb surfactants, J ELEC SPEC, 103, 1999, pp. 489-492
Authors:
De Padova, P
Larciprete, R
Ottaviani, C
Priori, S
Quaresima, C
Reginelli, A
Ressel, B
Perfetti, P
Citation: P. De Padova et al., Ge/Bi/Si(001)-c(4 x 2) interface studied by high-resolution core-level spectroscopy, SURF SCI, 435, 1999, pp. 362-366
Authors:
De Padova, P
Larciprete, R
Quaresima, C
Ottaviani, C
Ressel, B
Perfetti, P
Citation: P. De Padova et al., Identification of the Si 2p surface core level shifts on the Sb/Si(001)-(2x 1) interface - Reply, PHYS REV L, 82(22), 1999, pp. 4565-4565
Authors:
Almeida, J
Sirigu, L
Margaritondo, G
Da Padova, P
Quaresima, C
Perfetti, P
Citation: J. Almeida et al., Valence band offsets at strained Ge/Sb/Si(100) and Ge/H/Si(100) interfaces, J PHYS D, 32(3), 1999, pp. 191-194
Risultati:
1-11
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