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Results: 1-15 |
Results: 15
AN INFRARED STUDY OF H8SI8O12 CLUSTER ADSORPTION ON SI(100) SURFACES
Authors: ENG J RAGHAVACHARI K STRUCK LM CHABAL YJ BENT BE BANASZAKHOLL MM MCFEELY FR MICHAELS AM FLYNN GW CHRISTMAN SB CHABAN EE WILLIAMS GP RADERMACHER K MANTL S
Citation: J. Eng et al., AN INFRARED STUDY OF H8SI8O12 CLUSTER ADSORPTION ON SI(100) SURFACES, The Journal of chemical physics, 108(20), 1998, pp. 8680-8688
COMPUTER-ASSISTED ORTHOPEDIC-SURGERY WITH IMAGE-BASED INDIVIDUAL TEMPLATES
Authors: RADERMACHER K PORTHEINE F ANTON M ZIMOLONG A KASPERS G RAU G STAUDTE HW
Citation: K. Radermacher et al., COMPUTER-ASSISTED ORTHOPEDIC-SURGERY WITH IMAGE-BASED INDIVIDUAL TEMPLATES, Clinical orthopaedics and related research, (354), 1998, pp. 28-38
STEREOSCOPIC VISUALIZATION IN ENDOSCOPIC SURGERY - PROBLEMS, BENEFITS, AND POTENTIALS
Authors: VONPICHLER C RADERMACHER K BOECKMANN W RAU G JAKSE G
Citation: C. Vonpichler et al., STEREOSCOPIC VISUALIZATION IN ENDOSCOPIC SURGERY - PROBLEMS, BENEFITS, AND POTENTIALS, Presence, 6(2), 1997, pp. 198-217
VIBRATIONAL STUDY OF SILICON OXIDATION - H2O ON SI(100)
Authors: STRUCK LM ENG J BENT BE FLYNN GW CHABAL YJ CHRISTMAN SB CHABAN EE RAGHAVACHARI K WILLIAMS GP RADERMACHER K MANTL S
Citation: Lm. Struck et al., VIBRATIONAL STUDY OF SILICON OXIDATION - H2O ON SI(100), Surface science, 380(2-3), 1997, pp. 444-454
A VIBRATIONAL STUDY OF ETHANOL ADSORPTION ON SI(100)
Authors: ENG J RAGHAVACHARI K STRUCK LM CHABAL YJ BENT BE FLYNN GW CHRISTMAN SB CHABAN EE WILLIAMS GP RADERMACHER K MANTI S
Citation: J. Eng et al., A VIBRATIONAL STUDY OF ETHANOL ADSORPTION ON SI(100), The Journal of chemical physics, 106(23), 1997, pp. 9889-9898
THE STATE OF 3-D TECHNOLOGY AND EVALUATION
Authors: VONPICHLER C RADERMACHER K RAU G
Citation: C. Vonpichler et al., THE STATE OF 3-D TECHNOLOGY AND EVALUATION, Minimally invasive therapy & allied technologies, 5(5), 1996, pp. 419-426
INFLUENCE OF SURFACE MODIFICATIONS ON THE ELECTRONIC-PROPERTIES OF CVD DIAMOND FILMS
Authors: BACHMANN PK EBERHARDT W KESSLER B LADE H RADERMACHER K WIECHER DU WILSON H
Citation: Pk. Bachmann et al., INFLUENCE OF SURFACE MODIFICATIONS ON THE ELECTRONIC-PROPERTIES OF CVD DIAMOND FILMS, DIAMOND AND RELATED MATERIALS, 5(11), 1996, pp. 1378-1383
BEAM-INDUCED PHASE-TRANSFORMATIONS AND SELF ANNEALING IN AS-IMPLANTEDIRON SILICIDES
Authors: CRECELIUS G RADERMACHER K DIEKER C MESTERS S
Citation: G. Crecelius et al., BEAM-INDUCED PHASE-TRANSFORMATIONS AND SELF ANNEALING IN AS-IMPLANTEDIRON SILICIDES, Applied surface science, 91(1-4), 1995, pp. 50-55
OPTICAL AND ELECTRICAL-PROPERTIES OF BURIED SEMICONDUCTING BETA-FESI2
Authors: RADERMACHER K CARIUS R MANTL S
Citation: K. Radermacher et al., OPTICAL AND ELECTRICAL-PROPERTIES OF BURIED SEMICONDUCTING BETA-FESI2, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 163-167
ELECTRONIC-STRUCTURE OF BURIED ALPHA-FESI2 AND BETA-FESI2 LAYERS - SOFT-X-RAY EMISSION AND ABSORPTION STUDIES COMPARED TO BAND-STRUCTURE CALCULATIONS
Authors: EISEBITT S RUBENSSON JE NICODEMUS M BOSKE T BLUGEL S EBERHARDT W RADERMACHER K MANTL S BIHLMAYER G
Citation: S. Eisebitt et al., ELECTRONIC-STRUCTURE OF BURIED ALPHA-FESI2 AND BETA-FESI2 LAYERS - SOFT-X-RAY EMISSION AND ABSORPTION STUDIES COMPARED TO BAND-STRUCTURE CALCULATIONS, Physical review. B, Condensed matter, 50(24), 1994, pp. 18330-18340
ELECTRON-TRANSPORT OF INHOMOGENEOUS ALPHA-FESI2 (111)SI SCHOTTKY BARRIERS/
Authors: RADERMACHER K SCHUPPEN A MANTL S
Citation: K. Radermacher et al., ELECTRON-TRANSPORT OF INHOMOGENEOUS ALPHA-FESI2 (111)SI SCHOTTKY BARRIERS/, Solid-state electronics, 37(3), 1994, pp. 443-449
ALLOTAXIAL GROWTH OF EPITAXIAL SI FESI2,/SI HETEROSTRUCTURES/
Authors: MULLER O MANTL S RADERMACHER K BAY HL CRECELIUS G DIEKER C MESTERS S
Citation: O. Muller et al., ALLOTAXIAL GROWTH OF EPITAXIAL SI FESI2,/SI HETEROSTRUCTURES/, Applied surface science, 73, 1993, pp. 141-145
GROWTH AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED FESI2 ON (111)SI
Authors: RADERMACHER K MANTL S GERTHSEN D DIEKER C LUTH H
Citation: K. Radermacher et al., GROWTH AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED FESI2 ON (111)SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 831-834
QUANTUM TRANSPORT OF BURIED SINGLE-CRYSTALLINE COSI2 LAYERS IN (111)SI AND (100)SI SUBSTRATES
Authors: RADERMACHER K MONROE D WHITE AE SHORT KT JEBASINSKI R
Citation: K. Radermacher et al., QUANTUM TRANSPORT OF BURIED SINGLE-CRYSTALLINE COSI2 LAYERS IN (111)SI AND (100)SI SUBSTRATES, Physical review. B, Condensed matter, 48(11), 1993, pp. 8002-8015
REACTION OF IRON AND SILICON DURING ION-IMPLANTATION
Authors: CRECELIUS G RADERMACHER K DIEKER C
Citation: G. Crecelius et al., REACTION OF IRON AND SILICON DURING ION-IMPLANTATION, Journal of applied physics, 73(10), 1993, pp. 4848-4851
Risultati: 1-15 |