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Results: 1-6 |
Results: 6

Authors: BRILLSON LJ YANG X RAISANEN AD FRANCIOSI A VANZETTI L SORBA L
Citation: Lj. Brillson et al., DEEP-LEVEL FORMATION AND HETEROJUNCTION BAND OFFSETS AT ZNSE GAAS INTERFACES/, Applied surface science, 123, 1998, pp. 289-293

Authors: YANG X BRILLSON LJ RAISANEN AD VANZETTI L BONANNI A FRANCIOSI A GRUNDMANN M BIMBERG D
Citation: X. Yang et al., EVOLUTION OF DEEP LEVELS AND INTERNAL PHOTOEMISSION WITH ANNEALING TEMPERATURE AT ZNSE GAAS INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2961-2966

Authors: YANG X BRILLSON LJ RAISANEN AD VANZETTI L BONANNI A FRANCIOSI A
Citation: X. Yang et al., INTERNAL PHOTOINJECTION AND DEEP-LEVEL LUMINESCENCE AT ZNSE GAAS HETEROINTERFACES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 867-871

Authors: RAISANEN AD BRILLSON LJ VANZETTI L BONANNI A FRANCIOSI A
Citation: Ad. Raisanen et al., DEEP-LEVEL FORMATION AT ZNSE GAAS(100) INTERFACES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1705-1710

Authors: RAISANEN AD BRILLSON LJ VANZETTI L BONANNI A FRANCIOSI A
Citation: Ad. Raisanen et al., ATOMIC DIFFUSION-INDUCED DEEP LEVELS NEAR ZNSE GAAS(100) INTERFACES/, Applied physics letters, 66(24), 1995, pp. 3301-3303

Authors: BRILLSON LJ VITOMIROV I RAISANEN AD CHANG S LIN CL MCINTURFF DT KIRCHNER PD WOODALL JM
Citation: Lj. Brillson et al., DEEP LEVELS AND BAND BENDING AT GAP(100) AND GAP(110) SURFACES, Surface science, 309, 1994, pp. 303-308
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