Authors: RAKHSHANDEHROO MR WEIGOLD JW TIAN WC PANG SW

Citation: Mr. Rakhshandehroo et al., DRY-ETCHING OF SI FIELD EMITTERS AND HIGH-ASPECT-RATIO RESONATORS USING AN INDUCTIVELY-COUPLED PLASMA SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2849-2854

Authors: RAKHSHANDEHROO MR PANG SW

Citation: Mr. Rakhshandehroo et Sw. Pang, FABRICATION OF SELF-ALIGNED SILICON FIELD-EMISSION DEVICES AND EFFECTS OF SURFACE PASSIVATION ON EMISSION CURRENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 765-769

Authors: RAKHSHANDEHROO MR PANG SW

Citation: Mr. Rakhshandehroo et Sw. Pang, FIELD-EMISSION FROM GATED SI EMITTER TIPS WITH PRECISE GATE TIP SPACING, GATE DIAMETER, TIP SHARPNESS, AND TIP PROTRUSION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2777-2781

Authors: RAKHSHANDEHROO MR PANG SW

Citation: Mr. Rakhshandehroo et Sw. Pang, SHARPENING SI FIELD EMITTER TIPS BY DRY-ETCHING AND LOW-TEMPERATURE PLASMA OXIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3697-3701

Authors: RAKHSHANDEHROO MR PANG SW

Citation: Mr. Rakhshandehroo et Sw. Pang, FABRICATION OF SI FIELD EMITTERS BY DRY-ETCHING AND MASK EROSION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 612-616

Authors: RAKHSHANDEHROO MR SUKARDI F PANG SW

Citation: Mr. Rakhshandehroo et al., SIMULATION AND DRY-ETCHING OF FIELD EMITTER TIPS IN SI, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1832-1838