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Results: 1-10 |
Results: 10
COMPUTATIONAL APPROACH FOR THE CHEMICAL-SENSITIVITY OF OXIDE AND SULFIDE SEMICONDUCTOR SURFACES
Authors: RANTALA TS LANTTO V
Citation: Ts. Rantala et V. Lantto, COMPUTATIONAL APPROACH FOR THE CHEMICAL-SENSITIVITY OF OXIDE AND SULFIDE SEMICONDUCTOR SURFACES, Physica scripta. T, T69, 1997, pp. 259-263
SURFACE RELAXATION OF THE (10(1)OVER-BAR-0) FACE OF WURTZITE CDS
Authors: RANTALA TT RANTALA TS LANTTO V VAARA J
Citation: Tt. Rantala et al., SURFACE RELAXATION OF THE (10(1)OVER-BAR-0) FACE OF WURTZITE CDS, Surface science, 352, 1996, pp. 77-82
SOME EFFECTS OF MOBILE DONORS ON ELECTRON TRAPPING AT SEMICONDUCTOR SURFACES
Authors: RANTALA TS LANTTO V
Citation: Ts. Rantala et V. Lantto, SOME EFFECTS OF MOBILE DONORS ON ELECTRON TRAPPING AT SEMICONDUCTOR SURFACES, Surface science, 352, 1996, pp. 765-770
EFFECTS OF MOBILE DONORS ON POTENTIAL DISTRIBUTION IN GRAIN CONTACTS OF SINTERED CERAMIC SEMICONDUCTORS
Authors: RANTALA TS LANTTO V RANTALA TT
Citation: Ts. Rantala et al., EFFECTS OF MOBILE DONORS ON POTENTIAL DISTRIBUTION IN GRAIN CONTACTS OF SINTERED CERAMIC SEMICONDUCTORS, Journal of applied physics, 79(12), 1996, pp. 9206-9212
A CLUSTER APPROACH FOR THE ADSORPTION OF OXYGEN AND CARBON-MONOXIDE ON SNO2 AND CDS SURFACES
Authors: RANTALA TS GOLOVANOV V LANTTO V
Citation: Ts. Rantala et al., A CLUSTER APPROACH FOR THE ADSORPTION OF OXYGEN AND CARBON-MONOXIDE ON SNO2 AND CDS SURFACES, Sensors and actuators. B, Chemical, 25(1-3), 1995, pp. 532-536
COMPUTER-SIMULATION OF THE SURFACE-ENERGY BARRIER OF OXIDIC SEMICONDUCTORS WITH MOBILE DONORS
Authors: LANTTO V RANTALA TS
Citation: V. Lantto et Ts. Rantala, COMPUTER-SIMULATION OF THE SURFACE-ENERGY BARRIER OF OXIDIC SEMICONDUCTORS WITH MOBILE DONORS, Sensors and actuators. B, Chemical, 19(1-3), 1994, pp. 711-715
A CLUSTER APPROACH FOR THE SNO2 (110) FACE
Authors: RANTALA TS LANTTO V RANTALA TT
Citation: Ts. Rantala et al., A CLUSTER APPROACH FOR THE SNO2 (110) FACE, Sensors and actuators. B, Chemical, 19(1-3), 1994, pp. 716-719
A CLUSTER APPROACH FOR MODELING OF SURFACE CHARACTERISTICS OF STANNICOXIDE
Authors: RANTALA TS LANTTO V RANTALA TT
Citation: Ts. Rantala et al., A CLUSTER APPROACH FOR MODELING OF SURFACE CHARACTERISTICS OF STANNICOXIDE, Physica scripta. T, 54, 1994, pp. 252-255
SIMULATION STUDIES OF NONOHMIC CONDUCTANCE BEHAVIOR IN SNO2 THICK-FILM GAS SENSORS
Authors: RANTALA TS PIRTTIAHO L LANTTO V
Citation: Ts. Rantala et al., SIMULATION STUDIES OF NONOHMIC CONDUCTANCE BEHAVIOR IN SNO2 THICK-FILM GAS SENSORS, Sensors and actuators. B, Chemical, 16(1-3), 1993, pp. 323-327
RATE-EQUATION SIMULATION OF THE HEIGHT OF SCHOTTKY BARRIERS AT THE SURFACE OF OXIDIC SEMICONDUCTORS
Authors: RANTALA TS LANTTO V RANTALA TT
Citation: Ts. Rantala et al., RATE-EQUATION SIMULATION OF THE HEIGHT OF SCHOTTKY BARRIERS AT THE SURFACE OF OXIDIC SEMICONDUCTORS, Sensors and actuators. B, Chemical, 13(1-3), 1993, pp. 234-237
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