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Results: 1
OXIDATION ENHANCED DIFFUSION OF BORON IN SILICON AT 650-750-DEGREES-CUSING STEAM IN THE RANGE 1-15 ATMOSPHERES
Authors:
LEVER RF GRIFFIN PB RAUSCH WA
Citation:
Rf. Lever et al., OXIDATION ENHANCED DIFFUSION OF BORON IN SILICON AT 650-750-DEGREES-CUSING STEAM IN THE RANGE 1-15 ATMOSPHERES, Journal of applied physics, 78(5), 1995, pp. 3115-3120
Risultati:
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