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Results: 1-20 |
Results: 20
OPTICAL, STRUCTURAL AND ELECTRICAL-PROPERTIES OF DEVICE-QUALITY HYDROGENATED AMORPHOUS SILICON-NITROGEN FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: GIORGIS F GIULIANI F PIRRI CF TRESSO E SUMMONTE C RIZZOLI R GALLONI R DESALVO A RAVA P
Citation: F. Giorgis et al., OPTICAL, STRUCTURAL AND ELECTRICAL-PROPERTIES OF DEVICE-QUALITY HYDROGENATED AMORPHOUS SILICON-NITROGEN FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(4), 1998, pp. 925-944
ANTIOXIDANT ENZYMES IN BACTERIAL STATIONARY-PHASE - AN ANOMALY IN THEDOGMA OF OXIDATIVE STRESS
Authors: STEINMAN H BANDYOPADHYAY P RAVA P
Citation: H. Steinman et al., ANTIOXIDANT ENZYMES IN BACTERIAL STATIONARY-PHASE - AN ANOMALY IN THEDOGMA OF OXIDATIVE STRESS, Free radical biology & medicine, 25, 1998, pp. 93-93
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF A-SI1-XNX-H BASED SUPERLATTICE STRUCTURES
Authors: SUMMONTE C RIZZOLI R GALLONI R GIORGIS F GIULIANI F PIRRI CF TRESSO E DESALVO A ZIGNANI F RAVA P
Citation: C. Summonte et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF A-SI1-XNX-H BASED SUPERLATTICE STRUCTURES, Journal of non-crystalline solids, 230, 1998, pp. 1127-1131
CORRELATION BETWEEN THE OPTOELECTRONIC PROPERTIES AND THE STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON FILMS GROWN FROM A C2H2 GAS-SOURCE
Authors: GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: F. Giorgis et al., CORRELATION BETWEEN THE OPTOELECTRONIC PROPERTIES AND THE STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON FILMS GROWN FROM A C2H2 GAS-SOURCE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(4), 1997, pp. 471-483
A-SIC-H FILMS DEPOSITED BY PECVD FROM SILANE PLUS ACETYLENE AND SILANE PLUS ACETYLENE PLUS HYDROGEN GAS-MIXTURE
Authors: GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: F. Giorgis et al., A-SIC-H FILMS DEPOSITED BY PECVD FROM SILANE PLUS ACETYLENE AND SILANE PLUS ACETYLENE PLUS HYDROGEN GAS-MIXTURE, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1606-1611
WIDE-BAND GAP AMORPHOUS SILICON-BASED ALLOYS
Authors: GIORGIS F PIRRI CF TRESSO E RIGATO V ZANDOLIN S RAVA P
Citation: F. Giorgis et al., WIDE-BAND GAP AMORPHOUS SILICON-BASED ALLOYS, Physica. B, Condensed matter, 229(3-4), 1997, pp. 233-239
OPTOELECTRONIC PROPERTIES, STRUCTURE AND COMPOSITION OF A-SIC-H FILMSGROWN IN UNDILUTED AND H-2 DILUTED SILANE-METHANE PLASMA
Authors: DESALVO A GIORGIS F PIRRI CF TRESSO E RAVA P GALLONI R RIZZOLI R SUMMONTE C
Citation: A. Desalvo et al., OPTOELECTRONIC PROPERTIES, STRUCTURE AND COMPOSITION OF A-SIC-H FILMSGROWN IN UNDILUTED AND H-2 DILUTED SILANE-METHANE PLASMA, Journal of applied physics, 81(12), 1997, pp. 7973-7980
EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E RIGATO V COSCIA U AMBROSONE G CATALANOTTI S RAVA P
Citation: F. Demichelis et al., EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS, Solid state communications, 98(7), 1996, pp. 617-622
LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS)
Authors: FATHALLAH M GHARBI R CROVINI G DEMICHELIS F GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: M. Fathallah et al., LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS), Journal of non-crystalline solids, 200, 1996, pp. 490-494
COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: GIORGIS F RAVA P GALLONI R RIZZOLI R SUMMONTE C CROVINI G DEMICHELIS F PIRRI CF TRESSO E RIGATO V
Citation: F. Giorgis et al., COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of non-crystalline solids, 200, 1996, pp. 596-600
CHARACTERIZATION OF THE EFFECT OF GROWTH-CONDITIONS ON A-SIC-H FILMS
Authors: RAVA P CROVINI G DEMICHELIS F GIORGIS F PIRRI CF
Citation: P. Rava et al., CHARACTERIZATION OF THE EFFECT OF GROWTH-CONDITIONS ON A-SIC-H FILMS, Journal of applied physics, 80(7), 1996, pp. 4116-4123
POWDER DISSIPATION IN PECVD FOR SIH4-CH4-H-2 GAS-MIXTURES
Authors: RAVA P CROVINI G DEMICHELIS F GIORGIS F GALLONI R RIZZOLI R SUMMONTE C
Citation: P. Rava et al., POWDER DISSIPATION IN PECVD FOR SIH4-CH4-H-2 GAS-MIXTURES, Journal de physique. IV, 5(C5), 1995, pp. 1125-1132
OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R RIZZOLI R SUMMONTE C RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS, Solar energy materials and solar cells, 37(3-4), 1995, pp. 315-321
DENSITY OF GAP STATES DECONVOLUTED FROM PHOTOCONDUCTIVE SPECTRA FOR UNDOPED AMORPHOUS-SILICON AND SILICON-CARBON THIN-FILMS
Authors: PISARKIEWICZ T STAPINSKI T ADRIAENSSENS G LAUWERENS W RAVA P
Citation: T. Pisarkiewicz et al., DENSITY OF GAP STATES DECONVOLUTED FROM PHOTOCONDUCTIVE SPECTRA FOR UNDOPED AMORPHOUS-SILICON AND SILICON-CARBON THIN-FILMS, Acta Physica Polonica. A, 87(2), 1995, pp. 407-410
BORON AND PHOSPHORUS DOPING OF A-SIC-H THIN-FILMS BY MEANS OF ION-IMPLANTATION
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R SUMMONTE C RIZZOLI R ZIGNANI F RAVA P
Citation: F. Demichelis et al., BORON AND PHOSPHORUS DOPING OF A-SIC-H THIN-FILMS BY MEANS OF ION-IMPLANTATION, Thin solid films, 265(1-2), 1995, pp. 113-118
THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R RIZZOLI R SUMMONTE C ZIGNANI F RAVA P MADAN A
Citation: F. Demichelis et al., THE INFLUENCE OF HYDROGEN DILUTION ON THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(2), 1994, pp. 377-386
OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E AMATO G COSCIA U AMBROSONE G RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF A-SI1-XCXH FILMS PREPARED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ELECTROLUMINESCENT DEVICES, Thin solid films, 241(1-2), 1994, pp. 274-277
A NEW MODULAR MULTICHAMBER PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SYSTEM
Authors: MADAN A RAVA P SCHROPP REI VONROEDERN B
Citation: A. Madan et al., A NEW MODULAR MULTICHAMBER PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SYSTEM, Applied surface science, 70-1, 1993, pp. 716-721
ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E AMATO G HERREMANS H GREVENDONK W RAVA P
Citation: F. Demichelis et al., ELECTRONIC DENSITY-OF-STATES IN A-SIC-H FILMS, Journal of non-crystalline solids, 166, 1993, pp. 1015-1018
PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE
Authors: DEMICHELIS F PIRRI CF TRESSO E DELLAMEA G RIGATO V RAVA P
Citation: F. Demichelis et al., PHYSICAL-PROPERTIES OF UNDOPED AND DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE, Semiconductor science and technology, 6(12), 1991, pp. 1141-1146
Risultati: 1-20 |