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OPTICAL MONITORING OF THE GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC VAPOR-PHASE EPITAXY DEPOSITION OF CARBON-DOPED GAAS
Authors:
REBEY A BEJI L ELJANI B GIBART P
Citation:
A. Rebey et al., OPTICAL MONITORING OF THE GROWTH-RATE REDUCTION BY CCL4 DURING METALORGANIC VAPOR-PHASE EPITAXY DEPOSITION OF CARBON-DOPED GAAS, Journal of crystal growth, 191(4), 1998, pp. 734-739
Risultati:
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