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Results:
1-8
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Results: 8
Authors:
GOGUENHEIM D
BRAVAIX A
VUILLAUME D
VARROT M
REVIL N
MORTINI P
Citation: D. Goguenheim et al., HOT-CARRIER RELIABILITY IN N-MOSFETS USED AS PASS-TRANSISTORS, Microelectronics and reliability, 38(4), 1998, pp. 539-544
Authors:
BRAVAIX A
GOGUENHEIM D
VUILLAUME D
REVIL N
VARROT M
MORTINI P
Citation: A. Bravaix et al., INFLUENCES OF THE DIFFERENT DEGRADATION MECHANISMS IN AC-STRESSED P-MOSFETS DURING PASS TRANSISTOR OPERATION, Microelectronic engineering, 36(1-4), 1997, pp. 305-308
Authors:
VINCENT E
REVIL N
PAPADAS C
GHIBAUDO G
Citation: E. Vincent et al., ELECTRIC-FIELD DEPENDENCE OF TDDB ACTIVATION-ENERGY IN ULTRATHIN OXIDES, Microelectronics and reliability, 36(11-12), 1996, pp. 1643-1646
Authors:
PAPADAS C
REVIL N
GHIBAUDO G
VINCENT E
Citation: C. Papadas et al., ON THE THRESHOLD VOLTAGE SHIFT AFTER HOT-CARRIER INJECTION IN DEEP-SUBMICRON N-CHANNEL MOSFFTS - A QUASI UNIFORM APPROACH, Microelectronic engineering, 28(1-4), 1995, pp. 361-364
Authors:
MIEVILLE JP
OUISSE T
CRISTOLOVEANU S
FORRO L
REVIL N
DUTOIT M
Citation: Jp. Mieville et al., OBSERVATION OF NONSTATIONARY TRANSPORT IN DEEP-SUBMICRON N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH SHUBNIKOV-DEHAAS OSCILLATIONS, Journal of applied physics, 75(8), 1994, pp. 4226-4232
Authors:
REVIL N
MIEVILLE JP
CRISTOLOVEANU S
DUTOIT M
MORTINI P
Citation: N. Revil et al., INVESTIGATION OF HOT-CARRIER-INDUCED DEGRADATION IN 0 1-MU-M CHANNEL-LENGTH N-MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 293-296
Authors:
CRISTOLOVEANU S
HADDARA H
REVIL N
Citation: S. Cristoloveanu et al., DEFECT LOCALIZATION INDUCED BY HOT-CARRIER INJECTION IN SHORT-CHANNELMOSFETS - CONCEPT, MODELING AND CHARACTERIZATION, Microelectronics and reliability, 33(9), 1993, pp. 1365-1385
Authors:
REVIL N
CRISTOLOVEANU S
MORTINI P
Citation: N. Revil et al., A COMPARISON OF MOSFETS AGING UNDER DC,AC AND ALTERNATING STRESS CONDITIONS, Microelectronics and reliability, 33(11-12), 1993, pp. 1909-1919
Risultati:
1-8
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