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Results: 1-25/58
Authors:
ROHATGI A
MOSCHNER J
Citation: A. Rohatgi et J. Moschner, COMMENTS ON 17.3-PERCENT EFFICIENCY METAL-OXIDE-SEMICONDUCTOR (MOS) SOLAR-CELLS WITH LIQUID-PHASE-DEPOSITED SILICON DIOXIDE, IEEE electron device letters, 19(11), 1998, pp. 447-447
Authors:
JELLISON GE
MODINE FA
DOSHI P
ROHATGI A
Citation: Ge. Jellison et al., SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF THIN-FILM SILICON-NITRIDE, Thin solid films, 313, 1998, pp. 193-197
Authors:
NARASIMHA S
CROTTY G
ROHATGI A
MEIER DL
Citation: S. Narasimha et al., BACK SURFACE FIELD EFFECTS IN THE 17.3-PERCENT EFFICIENT N-TYPE DENDRITIC WEB SILICON SOLAR-CELLS, Solid-state electronics, 42(9), 1998, pp. 1631-1640
Authors:
CAI L
ROHATGI A
HAN S
MAY G
ZOU M
Citation: L. Cai et al., INVESTIGATION OF THE PROPERTIES OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE AND ITS EFFECT ON SILICON SURFACE PASSIVATION, Journal of applied physics, 83(11), 1998, pp. 5885-5889
Authors:
DOSHI P
ROHATGI A
Citation: P. Doshi et A. Rohatgi, 18-PERCENT EFFICIENT SILICON PHOTOVOLTAIC DEVICES BY RAPID THERMAL-DIFFUSION AND OXIDATION, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1710-1716
Authors:
NARASIMHA S
ROHATGI A
Citation: S. Narasimha et A. Rohatgi, FABRICATION AND CHARACTERIZATION OF 18.6-PERCENT EFFICIENT MULTICRYSTALLINE SILICON SOLAR-CELLS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1776-1783
Authors:
KRYGOWSKI T
ROHATGI A
Citation: T. Krygowski et A. Rohatgi, A SIMULTANEOUSLY DIFFUSED, TEXTURED, IN-SITU OXIDE AR-COATED SOLAR-CELL PROCESS (STAR PROCESS) FOR HIGH-EFFICIENCY SILICON SOLAR-CELLS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 194-199
Authors:
NARASIMHA S
ROHATGI A
Citation: S. Narasimha et A. Rohatgi, EFFECTIVE PASSIVATION OF THE LOW-RESISTIVITY SILICON SURFACE BY A RAPID THERMAL OXIDE PLASMA SILICON-NITRIDE STACK, Applied physics letters, 72(15), 1998, pp. 1872-1874
Authors:
AMORY DW
CROUGHWELL ND
KIRCHNER JL
BLUMENTHAL JA
WHITE WD
GERSTLE L
ROHATGI A
BAUDET B
GROCOTT H
NEWMAN MF
Citation: Dw. Amory et al., THE QUANTITATIVE ELECTROENCEPHALOGRAM (QEEG) - RELATIONSHIP TO NEUROCOGNITIVE OUTCOME, Anesthesia and analgesia, 86(4), 1998, pp. 7-7
Authors:
ROPP ME
BEGOVIC M
ROHATGI A
LONG R
Citation: Me. Ropp et al., DESIGN CONSIDERATIONS FOR LARGE ROOF-INTEGRATED PHOTOVOLTAIC ARRAYS, Progress in photovoltaics, 5(1), 1997, pp. 55-67
Authors:
LI K
WEE ATS
LIN J
TAN KL
ZHOU L
LI SFY
FENG ZC
CHOU HC
KAMRA S
ROHATGI A
Citation: K. Li et al., A MICROSTRUCTURAL STUDY ON THE SURFACE AND INTERFACE OF CDTE CDS SOLAR-CELLS/, Journal of materials science. Materials in electronics, 8(3), 1997, pp. 125-132
Authors:
WALLACE RL
HANOKA JI
ROHATGI A
CROTTY G
Citation: Rl. Wallace et al., THIN SILICON STRING RIBBON, Solar energy materials and solar cells, 48(1-4), 1997, pp. 179-186
Authors:
ROHATGI A
NARASIMHA S
Citation: A. Rohatgi et S. Narasimha, DESIGN, FABRICATION, AND ANALYSIS OF GREATER-THAN 18-PERCENT EFFICIENT MULTICRYSTALLINE SILICON SOLAR-CELLS, Solar energy materials and solar cells, 48(1-4), 1997, pp. 187-197
Authors:
SINGH R
CHERUKURI KC
VEDULA L
ROHATGI A
MEJIA J
NARAYANAN S
Citation: R. Singh et al., ENHANCED DIFFUSION AND IMPROVED DEVICE PERFORMANCE USING DUAL SPECTRAL SOURCE RAPID THERMAL-PROCESSING, Journal of electronic materials, 26(12), 1997, pp. 1422-1427
Authors:
DOSHI P
MEJIA J
TATE K
ROHATGI A
Citation: P. Doshi et al., MODELING AND CHARACTERIZATION OF HIGH-EFFICIENCY SILICON SOLAR-CELLS FABRICATED BY RAPID THERMAL-PROCESSING, SCREEN PRINTING, AND PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1417-1424
Authors:
CAI L
ROHATGI A
Citation: L. Cai et A. Rohatgi, EFFECT OF POST-PECVD PHOTO-ASSISTED ANNEAL ON MULTICRYSTALLINE SILICON SOLAR-CELLS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 97-103
Authors:
RATAKONDA D
SINGH R
VEDULA L
ROHATGI A
MEJIA J
NARAYANAN S
Citation: D. Ratakonda et al., RAPID THERMAL-PROCESSING OF SCREEN-PRINTED OHMIC CONTACTS, Journal of the Electrochemical Society, 144(9), 1997, pp. 3237-3242
Authors:
KRYGOWSKI T
ROHATGI A
Citation: T. Krygowski et A. Rohatgi, A NOVEL-APPROACH TOWARD THE SIMULTANEOUS DIFFUSION OF BORON AND PHOSPHORUS IN SILICON, Journal of the Electrochemical Society, 144(1), 1997, pp. 346-349
Authors:
SINGH R
CHERUKURI KC
VEDULA L
ROHATGI A
NARAYANAN S
Citation: R. Singh et al., LOW-TEMPERATURE SHALLOW JUNCTION FORMATION USING VACUUM-ULTRAVIOLET PHOTONS DURING RAPID THERMAL-PROCESSING, Applied physics letters, 70(13), 1997, pp. 1700-1702
Authors:
DOSHI P
JELLISON GE
ROHATGI A
Citation: P. Doshi et al., CHARACTERIZATION AND OPTIMIZATION OF ABSORBING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED ANTIREFLECTION COATINGS FOR SILICON PHOTOVOLTAICS, Applied optics, 36(30), 1997, pp. 7826-7837
Authors:
DOSHI P
ROHATGI A
ROPP M
CHEN Z
RUBY D
MEIER DL
Citation: P. Doshi et al., RAPID THERMAL-PROCESSING OF HIGH-EFFICIENCY SILICON SOLAR-CELLS WITH CONTROLLED IN-SITU ANNEALING, Solar energy materials and solar cells, 41-2, 1996, pp. 31-39
Authors:
SOPORI BL
DENG X
BENNER JP
ROHATGI A
SANA P
ESTREICHER SK
PARK YK
ROBERSON MA
Citation: Bl. Sopori et al., HYDROGEN IN SILICON - A DISCUSSION OF DIFFUSION AND PASSIVATION MECHANISMS, Solar energy materials and solar cells, 41-2, 1996, pp. 159-169
MODELING THE GROWTH OF PECVD SILICON-NITRIDE FILMS FOR SOLAR-CELL APPLICATIONS USING NEURAL NETWORKS
Authors:
HAN SS
CAI L
MAY GS
ROHATGI A
Citation: Ss. Han et al., MODELING THE GROWTH OF PECVD SILICON-NITRIDE FILMS FOR SOLAR-CELL APPLICATIONS USING NEURAL NETWORKS, IEEE transactions on semiconductor manufacturing, 9(3), 1996, pp. 303-311
Authors:
ROHATGI A
NARASIMHA S
KAMRA S
KHATTAK CP
Citation: A. Rohatgi et al., FABRICATION AND ANALYSIS OF RECORD HIGH 18.2-PERCENT EFFICIENT SOLAR-CELLS ON MULTICRYSTALLINE SILICON MATERIAL, IEEE electron device letters, 17(8), 1996, pp. 401-403
Authors:
DOSHI P
MEJIA J
TATE K
ROHATGI A
Citation: P. Doshi et al., INTEGRATION OF SCREEN-PRINTING AND RAPID THERMAL-PROCESSING TECHNOLOGIES FOR SILICON SOLAR-CELL FABRICATION, IEEE electron device letters, 17(8), 1996, pp. 404-406