AAAAAA
Results: 51-58/58
Authors:
SANA P
ROHATGI A
KALEJS JP
BELL RO
Citation: P. Sana et al., GETTERING AND HYDROGEN PASSIVATION OF EDGE-DEFINED FILM-FED GROWN MULTICRYSTALLINE SILICON SOLAR-CELLS BY AL DIFFUSION AND FORMING GAS ANNEAL, Applied physics letters, 64(1), 1994, pp. 97-99
Authors:
SMITH AW
ROHATGI A
Citation: Aw. Smith et A. Rohatgi, NONISOTHERMAL EXTENSION OF THE SCHARFETTER-GUMMEL TECHNIQUE FOR HOT-CARRIER TRANSPORT IN HETEROSTRUCTURE SIMULATIONS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(10), 1993, pp. 1515-1523
Authors:
PANG SK
ROHATGI A
Citation: Sk. Pang et A. Rohatgi, A NEW METHODOLOGY FOR SEPARATING SHOCKLEY-READ-HALL LIFETIME AND AUGER RECOMBINATION COEFFICIENTS FROM THE PHOTOCONDUCTIVITY DECAY TECHNIQUE, Journal of applied physics, 74(9), 1993, pp. 5554-5560
Authors:
CHEN Z
PANG SK
YASUTAKE K
ROHATGI A
Citation: Z. Chen et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED OXIDE FOR LOW SURFACE RECOMBINATION VELOCITY AND HIGH EFFECTIVE LIFETIME IN SILICON, Journal of applied physics, 74(4), 1993, pp. 2856-2859
Authors:
SMITH AW
ROHATGI A
Citation: Aw. Smith et A. Rohatgi, REEVALUATION OF THE DERIVATIVES OF THE HALF ORDER FERMI INTEGRALS, Journal of applied physics, 73(11), 1993, pp. 7030-7034
Authors:
SANA P
SALAMI J
ROHATGI A
Citation: P. Sana et al., FABRICATION AND ANALYSIS OF HIGH-EFFICIENCY POLYCRYSTALLINE SILICON SOLAR-CELLS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1461-1468
Authors:
CHEN ZZ
SANA P
SALAMI J
ROHATGI A
Citation: Zz. Chen et al., A NOVEL AND EFFECTIVE PECVD SIO2 SIN ANTIREFLECTION COATING FOR SI SOLAR-CELLS/, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1161-1165
Authors:
CHEN Z
YASUTAKE K
DOOLITTLE A
ROHATGI A
Citation: Z. Chen et al., RECORD LOW SIO2 SI INTERFACE STATE DENSITY FOR LOW-TEMPERATURE OXIDESPREPARED BY DIRECT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 63(15), 1993, pp. 2117-2119