Authors: OSTEN HJ BARTH R FISCHER G HEINEMANN B KNOLL D LIPPERT G RUCKER H SCHLEY P ROPKE W

Citation: Hj. Osten et al., CARBON-CONTAINING GROUP-IV HETEROSTRUCTURES ON SI - PROPERTIES AND DEVICE APPLICATIONS, Thin solid films, 321, 1998, pp. 11-14

Authors: RUCKER H HEINEMANN B ROPKE W KURPS R KRUGER D LIPPERT G OSTEN HJ

Citation: H. Rucker et al., SUPPRESSED DIFFUSION OF BORON AND CARBON IN CARBON-RICH SILICON, Applied physics letters, 73(12), 1998, pp. 1682-1684

Authors: KRUGER D SCHLOTE J ROPKE W KURPS R QUICK C

Citation: D. Kruger et al., SHALLOW JUNCTION FORMATION BY PHOSPHORUS DIFFUSION FROM IN-SITU SPIKE-DOPED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON, Microelectronic engineering, 26(2), 1995, pp. 119-129

Authors: HERZEL F EHWALD KE HEINEMANN B KRUGER D KURPS R ROPKE W ZEINDL HP

Citation: F. Herzel et al., DECONVOLUTION OF NARROW BORON SIMS DEPTH PROFILES IN SI AND SIGE, Surface and interface analysis, 23(11), 1995, pp. 764-770