Authors: TENNANT D KLEMENS F SORSCH T BAUMANN F TIMP G LAYADI N KORNBLIT A SAPJETA BJ ROSAMILIA J BOONE T WEIR B SILVERMAN P

Citation: D. Tennant et al., GATE TECHNOLOGY FOR 70 NM METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN (LESS-THAN-2 NM) OXIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2799-2805