Authors: ROSSLER JM ROYTER Y MULL DE GOODHUE WD FONSTAD CG

Citation: Jm. Rossler et al., BROMINE ION-BEAM-ASSISTED ETCHING OF INP AND GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1012-1017