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Results: 1-12 |
Results: 12
MOLECULAR-BEAM EPITAXY OF AL0.48IN0.52AS GA0.47IN0.53AS HETEROSTRUCTURES ON METAMORPHIC ALXGAYIN1-X-YAS BUFFER LAYERS/
Authors: HAUPT M KOHLER K GANSER P MULLER S ROTHEMUND W
Citation: M. Haupt et al., MOLECULAR-BEAM EPITAXY OF AL0.48IN0.52AS GA0.47IN0.53AS HETEROSTRUCTURES ON METAMORPHIC ALXGAYIN1-X-YAS BUFFER LAYERS/, Journal of crystal growth, 175, 1997, pp. 1028-1032
INFLUENCE OF INTERDIFFUSION PROCESSES ON OPTICAL AND STRUCTURAL-PROPERTIES OF PSEUDOMORPHIC IN0.35GA0.65AS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: BURKNER S BAEUMLER M WAGNER J LARKINS EC ROTHEMUND W RALSTON JD
Citation: S. Burkner et al., INFLUENCE OF INTERDIFFUSION PROCESSES ON OPTICAL AND STRUCTURAL-PROPERTIES OF PSEUDOMORPHIC IN0.35GA0.65AS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 79(9), 1996, pp. 6818-6825
GROWTH OF HIGH-QUALITY AL0.48IN0.52AS GA0.47IN0.53AS HETEROSTRUCTURESUSING STRAIN RELAXED ALXGAYIN1-X-YAS BUFFER LAYERS ON GAAS/
Authors: HAUPT M KOHLER K GANSER P EMMINGER S MULLER S ROTHEMUND W
Citation: M. Haupt et al., GROWTH OF HIGH-QUALITY AL0.48IN0.52AS GA0.47IN0.53AS HETEROSTRUCTURESUSING STRAIN RELAXED ALXGAYIN1-X-YAS BUFFER LAYERS ON GAAS/, Applied physics letters, 69(3), 1996, pp. 412-414
IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING
Authors: LARKINS EC BENZ W ESQUIVIAS I ROTHEMUND W BAEUMLER M WEISSER S SCHONFELDER A FLEISSNER J JANTZ W ROSENZWEIG J RALSTON JD
Citation: Ec. Larkins et al., IMPROVED PERFORMANCE FROM PSEUDOMORPHIC INYGA1-YAS-GAAS MQW LASERS WITH LOW GROWTH TEMPERATURE ALXGA1-XAS SHORT-PERIOD SUPERLATTICE CLADDING, IEEE photonics technology letters, 7(1), 1995, pp. 16-19
PROCESS PARAMETER DEPENDENCE OF IMPURITY-FREE INTERDIFFUSION IN GAAS ALXGA1-XAS AND INYGA1-YAS/GAAS MULTIPLE-QUANTUM WELLS/
Authors: BURKNER S MAIER M LARKINS EC ROTHEMUND W OREILLY EP RALSTON JD
Citation: S. Burkner et al., PROCESS PARAMETER DEPENDENCE OF IMPURITY-FREE INTERDIFFUSION IN GAAS ALXGA1-XAS AND INYGA1-YAS/GAAS MULTIPLE-QUANTUM WELLS/, Journal of electronic materials, 24(7), 1995, pp. 805-812
IMPURITY FREE SELECTIVE INTERDIFFUSION OF PSEUDOMORPHIC INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL LASER AND MODULATOR STRUCTURES/
Authors: BURKNER S LARKINS EC BAEUMLER M WAGNER J ROTHEMUND W FLEMIG G RALSTON JD
Citation: S. Burkner et al., IMPURITY FREE SELECTIVE INTERDIFFUSION OF PSEUDOMORPHIC INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL LASER AND MODULATOR STRUCTURES/, Materials science and technology, 11(8), 1995, pp. 840-843
ROOM-TEMPERATURE, HIGH-DEPOSITION-RATE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDE THIN-FILMS PRODUCING LOW SURFACE DAMAGE ON LATTICE-MATCHED AND PSEUDOMORPHIC III-V QUANTUM-WELL STRUCTURES
Authors: SAH RE RALSTON JD EICHIN G DISCHLER B ROTHEMUND W WAGNER J LARKINS EC BAUMANN H
Citation: Re. Sah et al., ROOM-TEMPERATURE, HIGH-DEPOSITION-RATE, PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON OXYNITRIDE THIN-FILMS PRODUCING LOW SURFACE DAMAGE ON LATTICE-MATCHED AND PSEUDOMORPHIC III-V QUANTUM-WELL STRUCTURES, Thin solid films, 259(2), 1995, pp. 225-230
DIAMOND LUMINESCENCE - RESOLVED DONOR-ACCEPTOR PAIR RECOMBINATION LINES
Authors: DISCHLER B ROTHEMUND W MAIER K WILD C BIEBL H KOIDL P
Citation: B. Dischler et al., DIAMOND LUMINESCENCE - RESOLVED DONOR-ACCEPTOR PAIR RECOMBINATION LINES, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 825-830
RESOLVED DONOR-ACCEPTOR PAIR-RECOMBINATION LINES IN DIAMOND LUMINESCENCE
Authors: DISCHLER B ROTHEMUND W WILD C LOCHER R BIEBL H KOIDL P
Citation: B. Dischler et al., RESOLVED DONOR-ACCEPTOR PAIR-RECOMBINATION LINES IN DIAMOND LUMINESCENCE, Physical review. B, Condensed matter, 49(3), 1994, pp. 1685-1689
ENHANCEMENTS IN MBE-GROWN HIGH-SPEED GAAS AND IN0.35GA0.65AS MQW LASER STRUCTURES USING BINARY SHORT-PERIOD SUPERLATTICES
Authors: RALSTON JD LARKINS EC ROTHEMUND W ESQUIVIAS I WEISSER S ROSENZWEIG J FLEISSNER J
Citation: Jd. Ralston et al., ENHANCEMENTS IN MBE-GROWN HIGH-SPEED GAAS AND IN0.35GA0.65AS MQW LASER STRUCTURES USING BINARY SHORT-PERIOD SUPERLATTICES, Journal of crystal growth, 127(1-4), 1993, pp. 19-24
STRAIN-RELAXED, HIGH-SPEED IN0.2GA0.8AS MQW P-I-N PHOTODETECTORS GROWN BY MBE
Authors: LARKINS EC BENDER G SCHNEIDER H RALSTON JD WAGNER J ROTHEMUND W DISCHLER B FLEISSNER J KOIDL P
Citation: Ec. Larkins et al., STRAIN-RELAXED, HIGH-SPEED IN0.2GA0.8AS MQW P-I-N PHOTODETECTORS GROWN BY MBE, Journal of crystal growth, 127(1-4), 1993, pp. 62-67
MBE GROWTH OPTIMIZATION OF INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/
Authors: LARKINS EC ROTHEMUND W MAIER M WANG ZM RALSTON JD JANTZ W
Citation: Ec. Larkins et al., MBE GROWTH OPTIMIZATION OF INYGA1-YAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of crystal growth, 127(1-4), 1993, pp. 541-545
Risultati: 1-12 |