Authors:
DACHS C
ROUBAUD F
PALAU JM
BRUGUIER G
GASIOT J
TASTET P
CALVET MC
CALVEL P
Citation: C. Dachs et al., SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT, IEEE transactions on nuclear science, 42(6), 1995, pp. 1935-1939
Authors:
DACHS C
ROUBAUD F
PALAU JM
BRUGUIER G
GASIOT J
TASTET P
Citation: C. Dachs et al., EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2167-2171
Authors:
ROUBAUD F
DACHS C
PALAU JM
GASIOT J
TASTET P
Citation: F. Roubaud et al., EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1952-1958