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Results:
1-16
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Results: 16
Authors:
SADOVNIKOV AD
ROULSTON DJ
Citation: Ad. Sadovnikov et Dj. Roulston, A NEW NUMERICAL-METHOD FOR QUASI-3-DIMENSIONAL SMALL-SIGNAL SIMULATION OF SILICON BIPOLAR-TRANSISTORS, Solid-state electronics, 41(1), 1997, pp. 33-40
Authors:
SADOVNIKOV AD
ROULSTON DJ
CELI D
Citation: Ad. Sadovnikov et al., EXTRACTION OF SPICE BJT MODEL PARAMETERS IN BIPOLE3 USING OPTIMIZATION METHODS, IEEE transactions on computer-aided design of integrated circuits and systems, 15(11), 1996, pp. 1332-1339
Authors:
MCANDREW CC
SEITCHIK JA
BOWERS DF
DUNN M
FOISY M
GETREU I
MCSWAIN M
MOINIAN S
PARKER J
ROULSTON DJ
SCHROTER M
VANWIJNEN P
WAGNER LF
Citation: Cc. Mcandrew et al., VBIC95, THE VERTICAL BIPOLAR INTER-COMPANY MODEL, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1476-1483
Authors:
SADOVNIKOV AD
ROULSTON DJ
CELI D
Citation: Ad. Sadovnikov et al., NUMERICAL AND ANALYTICAL CALCULATION OF COLLECTOR BURIED LAYER RESISTANCE IN A BIPOLAR-TRANSISTOR, Solid-state electronics, 38(6), 1995, pp. 1261-1263
Authors:
VAIDYANATHAN M
ROULSTON DJ
Citation: M. Vaidyanathan et Dj. Roulston, EFFECTIVE BASE-COLLECTOR TIME CONSTANTS FOR CALCULATING THE MAXIMUM OSCILLATION FREQUENCY OF BIPOLAR-TRANSISTORS, Solid-state electronics, 38(2), 1995, pp. 509-516
Authors:
ROULSTON DJ
Citation: Dj. Roulston, NEW BURIED P-GRID POLYSILICON EMITTER BIPOLAR POWER TRANSISTOR(), Solid-state electronics, 38(10), 1995, pp. 1854-1856
Authors:
VAIDYANATHAN M
ROULSTON DJ
Citation: M. Vaidyanathan et Dj. Roulston, COMPARISON OF THE OPTIMUM BASE WIDTH FOR ECL PROPAGATION DELAY AND MAXIMUM OSCILLATION FREQUENCY, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 365-367
Authors:
PARKER JR
ROULSTON DJ
Citation: Jr. Parker et Dj. Roulston, STATISTICAL COLLECTOR IMPLANT OPTIMIZATION FOR BICMOS USING FAST, PREDICTIVE BIPOLAR DEVICE SIMULATION AND RESPONSE-SURFACE TECHNIQUES, Solid-state electronics, 37(12), 1994, pp. 1991-1992
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, OPTIMUM COLLECTOR EPI-THICKNESS OF ADVANCED BIPOLAR-TRANSISTORS FOR HIGH-SPEED AND HIGH-CURRENT OPERATION, Solid-state electronics, 37(11), 1994, pp. 1885-1887
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, DESIGN TRADEOFFS FOR IMPROVED V-CE(SAT) VERSUS I-C OF BIPOLAR-TRANSISTORS UNDER FORCED GAIN CONDITIONS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 398-402
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, MILLERS APPROXIMATION IN ADVANCED BIPOLAR-TRANSISTORS UNDER NONLOCAL IMPACT IONIZATION, CONDITIONS, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2471-2473
Authors:
KUMAR MJ
ROULSTON DJ
Citation: Mj. Kumar et Dj. Roulston, BASE ETCHED SELF-ALIGNED TRANSISTOR TECHNOLOGY FOR ADVANCED POLYEMITTER BIPOLAR-TRANSISTORS, Electronics Letters, 30(10), 1994, pp. 819-820
Authors:
SADOVNIKOV A
ROULSTON DJ
Citation: A. Sadovnikov et Dj. Roulston, QUASI-3-DIMENSIONAL MODELING OF BIPOLAR-TRANSISTOR CHARACTERISTICS, IEEE transactions on computer-aided design of integrated circuits and systems, 12(11), 1993, pp. 1742-1748
Authors:
SADOVNIKOV AD
ROULSTON DJ
Citation: Ad. Sadovnikov et Dj. Roulston, THE EFFECT OF SIDEWALL BASE INJECTION ON THE AC BASE RESISTANCE OF A BIPOLAR-TRANSISTOR, Solid-state electronics, 36(9), 1993, pp. 1368-1370
Authors:
KUMAR MJ
SADOVNIKOV AD
ROULSTON DJ
Citation: Mj. Kumar et al., COLLECTOR DESIGN TRADEOFFS FOR LOW-VOLTAGE APPLICATIONS OF ADVANCED BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1478-1483
Authors:
MANKU T
MCGREGOR JM
NATHAN A
ROULSTON DJ
NOEL JP
HOUGHTON DC
Citation: T. Manku et al., DRIFT HOLE MOBILITY IN STRAINED AND UNSTRAINED DOPED SI1-XGEX ALLOYS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1990-1996
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1-16
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