Authors:
VANCLEEF MWM
RUBINELLI FA
RIZZOLI R
PINGHINI R
SCHROPP REI
VANDERWEG WF
Citation: Mwm. Vancleef et al., AMORPHOUS-SILICON CARBIDE CRYSTALLINE SILICON HETEROJUNCTION SOLAR-CELLS - A COMPREHENSIVE STUDY OF THE PHOTOCARRIER COLLECTION/, JPN J A P 1, 37(7), 1998, pp. 3926-3932
Citation: Jk. Rath et al., MICROCRYSTALLINE N-LAYER AND P-LAYER AT THE TUNNEL JUNCTION OF A-SI-HA-SI-H TANDEM CELLS/, Journal of non-crystalline solids, 230, 1998, pp. 1282-1286
Authors:
VANCLEEF MWM
RUBINELLI FA
RATH JK
SCHROPP REI
VANDERWEG WF
RIZZOLI R
SUMMONTE C
PINGHINI R
CENTURIONI E
GALLONI R
Citation: Mwm. Vancleef et al., PHOTOCARRIER COLLECTION IN A-SIC-H C-SI HETEROJUNCTION SOLAR-CELLS/, Journal of non-crystalline solids, 230, 1998, pp. 1291-1294
Citation: Ja. Schmidt et Fa. Rubinelli, LIMITATIONS OF THE CONSTANT PHOTOCURRENT METHOD - A COMPREHENSIVE EXPERIMENTAL AND MODELING STUDY, Journal of applied physics, 83(1), 1998, pp. 339-348
Authors:
VANCLEEF NWM
RATH JK
RUBINELLI FA
VANDERWERF CHM
SCHROPP REI
VANDERWEG WF
Citation: Nwm. Vancleef et al., PERFORMANCE OF HETEROJUNCTION P(-CELLS() MICROCRYSTALLINE SILICON N CRYSTALLINE SILICON SOLAR), Journal of applied physics, 82(12), 1997, pp. 6089-6095
Citation: Fa. Rubinelli et al., A COMPARISON OF THE HYDROGENATED AMORPHOUS SI SCHOTTKY-BARRIER AND THE HYDROGENATED AMORPHOUS SI P-I-N DARK FORWARD-BIAS CURRENT DENSITY-VOLTAGE CHARACTERISTICS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(4), 1996, pp. 407-426
Authors:
FONASH SJ
HOU JY
RUBINELLI FA
BENNETT M
WIEDEMAN S
YANG LY
NEWTON J
Citation: Sj. Fonash et al., PHOTODETECTION ENHANCEMENT IN 2-TERMINAL AMORPHOUS SILICON-BASED DEVICES - AN EXPERIMENTAL AND COMPUTER-SIMULATION STUDY, Optical engineering, 33(6), 1994, pp. 2065-2069
Citation: Fa. Rubinelli, THE ORIGIN OF QUANTUM EFFICIENCIES GREATER-THAN UNITY IN A-SI-H SCHOTTKY BARRIERS, Journal of applied physics, 75(2), 1994, pp. 998-1004