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Results: 1-15 |
Results: 15
INTEGRATED DYNAMIC SIMULATION OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF POLYSILICON
Authors: LU GQ BORA M TEDDER LL RUBLOFF GW
Citation: Gq. Lu et al., INTEGRATED DYNAMIC SIMULATION OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION OF POLYSILICON, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 63-74
REAL-TIME PROCESS SENSING AND METROLOGY IN AMORPHOUS AND SELECTIVE-AREA SILICON PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRY
Authors: CHOWDHURY AI READ WW RUBLOFF GW TEDDER LL PARSONS GN
Citation: Ai. Chowdhury et al., REAL-TIME PROCESS SENSING AND METROLOGY IN AMORPHOUS AND SELECTIVE-AREA SILICON PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(1), 1997, pp. 127-132
CONTAMINATION CONTROL FOR GAS DELIVERY FROM A LIQUID SOURCE IN SEMICONDUCTOR MANUFACTURING
Authors: LU GQ RUBLOFF GW DURHAM J
Citation: Gq. Lu et al., CONTAMINATION CONTROL FOR GAS DELIVERY FROM A LIQUID SOURCE IN SEMICONDUCTOR MANUFACTURING, IEEE transactions on semiconductor manufacturing, 10(4), 1997, pp. 425-432
POLYSILICON RTCVD PROCESS OPTIMIZATION FOR ENVIRONMENTALLY-CONSCIOUS MANUFACTURING
Authors: LU GQ BORA M RUBLOFF GW
Citation: Gq. Lu et al., POLYSILICON RTCVD PROCESS OPTIMIZATION FOR ENVIRONMENTALLY-CONSCIOUS MANUFACTURING, IEEE transactions on semiconductor manufacturing, 10(3), 1997, pp. 390-398
ROLE OF GAS-PHASE REACTIONS IN SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITION OZONE TEOS PROCESSES FOR OXIDE DEPOSITION/
Authors: SHAREEF IA RUBLOFF GW BILL WN
Citation: Ia. Shareef et al., ROLE OF GAS-PHASE REACTIONS IN SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITION OZONE TEOS PROCESSES FOR OXIDE DEPOSITION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 772-774
DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY (VOL 14, PG 267, 1996)
Authors: TEDDER LL RUBLOFF GW CONAGHAN BF PARSONS GN
Citation: Ll. Tedder et al., DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY (VOL 14, PG 267, 1996), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2680-2680
DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY
Authors: TEDDER LL RUBLOFF GW COHAGHAN BF PARSONS GN
Citation: Ll. Tedder et al., DYNAMIC RATE AND THICKNESS METROLOGY DURING POLY-SI RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION FROM SIH4 USING REAL-TIME IN-SITU MASS-SPECTROMETRY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 267-270
PAPERS FROM THE TOPICAL CONFERENCE ON MANUFACTURING SCIENCE AND TECHNOLOGY - 24-27 OCTOBER 1994, COLORADO CONVENTION CENTER, DENVER, COLORADO - PREFACE
Authors: RUBLOFF GW LIEHR M
Citation: Gw. Rubloff et M. Liehr, PAPERS FROM THE TOPICAL CONFERENCE ON MANUFACTURING SCIENCE AND TECHNOLOGY - 24-27 OCTOBER 1994, COLORADO CONVENTION CENTER, DENVER, COLORADO - PREFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1861-1861
SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITION OZONE TEOS PROCESS FOR SIO2 TRENCH FILLING/
Authors: SHAREEF IA RUBLOFF GW ANDERLE M GILL WN COTTE J KIM DH
Citation: Ia. Shareef et al., SUBATMOSPHERIC CHEMICAL-VAPOR-DEPOSITION OZONE TEOS PROCESS FOR SIO2 TRENCH FILLING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1888-1892
REAL-TIME PROCESS AND PRODUCT DIAGNOSTICS IN RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRIC SAMPLING
Authors: TEDDER LL RUBLOFF GW SHAREEF I ANDERLE M KIM DH PARSONS GN
Citation: Ll. Tedder et al., REAL-TIME PROCESS AND PRODUCT DIAGNOSTICS IN RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION USING IN-SITU MASS-SPECTROMETRIC SAMPLING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1924-1927
CONCEPTS IN COMPETITIVE MICROELECTRONICS MANUFACTURING
Authors: LIEHR M RUBLOFF GW
Citation: M. Liehr et Gw. Rubloff, CONCEPTS IN COMPETITIVE MICROELECTRONICS MANUFACTURING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2727-2740
INTEGRATED PROCESSING OF MOS GATE DIELECTRIC STRUCTURES
Authors: RUBLOFF GW OFFENBERG M LIEHR M
Citation: Gw. Rubloff et al., INTEGRATED PROCESSING OF MOS GATE DIELECTRIC STRUCTURES, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 96-100
SPECIAL ISSUE - INTEGRATED PROCESSING FOR MICRO AND OPTOELECTRONICS -PROCEEDINGS OF SYMPOSIUM D OF THE 1993 E-MRS SPRING MEETING - PREFACEAND INTRODUCTION
Authors: NISSIM YI RUBLOFF GW
Citation: Yi. Nissim et Gw. Rubloff, SPECIAL ISSUE - INTEGRATED PROCESSING FOR MICRO AND OPTOELECTRONICS -PROCEEDINGS OF SYMPOSIUM D OF THE 1993 E-MRS SPRING MEETING - PREFACEAND INTRODUCTION, Microelectronic engineering, 25(2-4), 1994, pp. 180000003-180000004
ROLE OF IMPLANTATION-INDUCED DEFECTS IN SURFACE-ORIENTED DIFFUSION OFFLUORINE IN SILICON
Authors: SZELES C NIELSEN B ASOKAKUMAR P LYNN KG ANDERLE M MA TP RUBLOFF GW
Citation: C. Szeles et al., ROLE OF IMPLANTATION-INDUCED DEFECTS IN SURFACE-ORIENTED DIFFUSION OFFLUORINE IN SILICON, Journal of applied physics, 76(6), 1994, pp. 3403-3409
CHEMICAL-VAPOR-DEPOSITION OF ROUGH-MORPHOLOGY SILICON FILMS OVER A BROAD TEMPERATURE-RANGE
Authors: DANA SS ANDERLE M RUBLOFF GW ACOVIC A
Citation: Ss. Dana et al., CHEMICAL-VAPOR-DEPOSITION OF ROUGH-MORPHOLOGY SILICON FILMS OVER A BROAD TEMPERATURE-RANGE, Applied physics letters, 63(10), 1993, pp. 1387-1389
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