Authors: SHEKHAWAT GS GUPTA RP SHEKHAWAT SS RUNTHALA DP VYAS PD SRIVASTAVA P VENKATESH S MAMHOUD K GARG KB

Citation: Gs. Shekhawat et al., SCANNING-TUNNELING-MICROSCOPY OF SI SIO2 INTERFACE ROUGHNESS AND ITS DEPENDENCE ON GROWTH-CONDITIONS/, Applied physics letters, 68(1), 1996, pp. 114-116