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Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching
Authors: Rabah, H Alain, S Claude, A
Citation: H. Rabah et al., Study of GaAs chemical etching in a mixture of hydrogen peroxide/succinic acid and ammonia. Thiourea effect on the surface roughness and on the presence of surface states after etching, APPL SURF S, 171(1-2), 2001, pp. 34-43
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