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Results: 1-21 |
Results: 21
Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter
Authors: Kalyanaraman, R Haynes, TE Yoon, M Larson, BC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantitative evolution of vacancy-type defects in high-energy ion-implanted Si: Au labeling and the vacancy implanter, NUCL INST B, 175, 2001, pp. 182-186
Electrical properties of cobalt and copper contamination in processed silicon
Authors: Benton, JL Boone, T Jacobson, DC Silverman, PJ Rosamilia, JM Rafferty, CS Weinzierl, S Vu, B
Citation: Jl. Benton et al., Electrical properties of cobalt and copper contamination in processed silicon, J ELCHEM SO, 148(6), 2001, pp. G326-G329
Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
Authors: Venezia, VC Pelaz, L Gossmann, HJL Haynes, TE Rafferty, CS
Citation: Vc. Venezia et al., Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon, APPL PHYS L, 79(9), 2001, pp. 1273-1275
Binding energy of vacancies to clusters formed in Si by high-energy ion implantation
Authors: Kalyanaraman, R Haynes, TE Holland, OW Gossmann, HJL Rafferty, CS Gilmer, GH
Citation: R. Kalyanaraman et al., Binding energy of vacancies to clusters formed in Si by high-energy ion implantation, APPL PHYS L, 79(13), 2001, pp. 1983-1985
Depth dependence of {311} defect dissolution
Authors: Venezia, VC Kalyanaraman, R Gossmann, HJL Rafferty, CS Werner, P
Citation: Vc. Venezia et al., Depth dependence of {311} defect dissolution, APPL PHYS L, 79(10), 2001, pp. 1429-1431
Mosquito collections following local transmission of Plasmodium falciparummalaria in Westmoreland County, Virginia
Authors: Strickman, D Gaffigan, T Wirtz, RA Benedict, MQ Rafferty, CS Barwick, RS Williams, HA
Citation: D. Strickman et al., Mosquito collections following local transmission of Plasmodium falciparummalaria in Westmoreland County, Virginia, J AM MOSQ C, 16(3), 2000, pp. 219-222
Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
Authors: Jaraiz, M Rubio, E Castrillo, P Pelaz, L Bailon, L Barbolla, J Gilmer, GH Rafferty, CS
Citation: M. Jaraiz et al., Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data, MAT SC S PR, 3(1-2), 2000, pp. 59-63
Dopant dose loss at the Si-SiO2 interface
Authors: Vuong, HH Rafferty, CS Eshraghi, SA Ning, J McMacken, JR Chaudhry, S McKinley, J Stevie, FA
Citation: Hh. Vuong et al., Dopant dose loss at the Si-SiO2 interface, J VAC SCI B, 18(1), 2000, pp. 428-434
The piggyBac element is capable of precise excision and transposition in cells and embryos of the mosquito, Anopheles gambiae
Authors: Grossman, GL Rafferty, CS Fraser, MJ Benedict, MQ
Citation: Gl. Grossman et al., The piggyBac element is capable of precise excision and transposition in cells and embryos of the mosquito, Anopheles gambiae, INSEC BIO M, 30(10), 2000, pp. 909-914
Series resistance limits for 0.05 mu m MOSFETs
Authors: Keys, P Gossmann, HJ Ng, KK Rafferty, CS
Citation: P. Keys et al., Series resistance limits for 0.05 mu m MOSFETs, SUPERLATT M, 27(2-3), 2000, pp. 125-136
Front-end process simulation
Authors: Rafferty, CS
Citation: Cs. Rafferty, Front-end process simulation, SOL ST ELEC, 44(5), 2000, pp. 863-868
Use of transient enhanced diffusion to tailor boron out-diffusion
Authors: Vuong, HH Xie, YH Frei, MR Hobler, G Pelaz, L Rafferty, CS
Citation: Hh. Vuong et al., Use of transient enhanced diffusion to tailor boron out-diffusion, IEEE DEVICE, 47(7), 2000, pp. 1401-1405
Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion
Authors: Hobler, G Pelaz, L Rafferty, CS
Citation: G. Hobler et al., Dose, energy, and ion species dependence of the effective plus factor for transient enhanced diffusion, J ELCHEM SO, 147(9), 2000, pp. 3494-3501
Gettering of Co in Si by high-energy B ion-implantation and by p/p(+) epitaxial Si
Authors: Benton, JL Boone, T Jacobson, DC Rafferty, CS
Citation: Jl. Benton et al., Gettering of Co in Si by high-energy B ion-implantation and by p/p(+) epitaxial Si, APPL PHYS L, 77(24), 2000, pp. 4010-4012
Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling
Authors: Kalyanaraman, R Haynes, TE Venezia, VC Jacobson, DC Gossmann, HJ Rafferty, CS
Citation: R. Kalyanaraman et al., Quantification of excess vacancy defects from high-energy ion implantationin Si by Au labeling, APPL PHYS L, 76(23), 2000, pp. 3379-3381
Continuum treatment of spatial correlation in damage annealing
Authors: Hobler, G Pelaz, L Rafferty, CS
Citation: G. Hobler et al., Continuum treatment of spatial correlation in damage annealing, NUCL INST B, 153(1-4), 1999, pp. 172-176
Effect of implant damage on the gate oxide thickness
Authors: Vuong, HH Bude, J Baumann, FH Evans-Lutterodt, K Ning, J Ma, Y Mcmacken, J Gossmann, HJ Silverman, P Rafferty, CS Hillenius, SJ
Citation: Hh. Vuong et al., Effect of implant damage on the gate oxide thickness, SOL ST ELEC, 43(5), 1999, pp. 985-988
Tsessebe, Topi and Tiang: three distinct Tc1-like transposable elements inthe malaria vector, Anopheles gambiae
Authors: Grossman, GL Cornel, AJ Rafferty, CS Robertson, HM Collins, FH
Citation: Gl. Grossman et al., Tsessebe, Topi and Tiang: three distinct Tc1-like transposable elements inthe malaria vector, Anopheles gambiae, GENETICA, 105(1), 1999, pp. 69-80
Boron pileup and clustering in silicon-on-insulator films
Authors: Vuong, HH Gossmann, HJ Pelaz, L Celler, GK Jacobson, DC Barr, D Hergenrother, J Monroe, D Venezia, VC Rafferty, CS Hillenius, SJ McKinley, J Stevie, FA Granger, C
Citation: Hh. Vuong et al., Boron pileup and clustering in silicon-on-insulator films, APPL PHYS L, 75(8), 1999, pp. 1083-1085
Activation and deactivation of implanted B in Si
Authors: Pelaz, L Venezia, VC Gossmann, HJ Gilmer, GH Fiory, AT Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., Activation and deactivation of implanted B in Si, APPL PHYS L, 75(5), 1999, pp. 662-664
B cluster formation and dissolution in Si: A scenario based on atomistic modeling
Authors: Pelaz, L Gilmer, GH Gossmann, HJ Rafferty, CS Jaraiz, M Barbolla, J
Citation: L. Pelaz et al., B cluster formation and dissolution in Si: A scenario based on atomistic modeling, APPL PHYS L, 74(24), 1999, pp. 3657-3659
Risultati: 1-21 |