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Authors: Hilsenbeck, J Rieger, W Nebauer, E John, W Trankle, G Wurfl, J Ramakrishan, A Obloh, H
Citation: J. Hilsenbeck et al., AlGaN/GaN HFETs with new ohmic and Schottky contacts for thermal stabilityup to 400 degrees C, PHYS ST S-A, 176(1), 1999, pp. 183-187
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