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Results: 1-12 |
Results: 12
Eckhaus instability - a possible wavelength changing mechanism in the evolution of dislocation patterns
Authors: Rashkeev, SN Glazov, MV Barlat, F
Citation: Sn. Rashkeev et al., Eckhaus instability - a possible wavelength changing mechanism in the evolution of dislocation patterns, COMP MAT SC, 21(2), 2001, pp. 230-242
Anisotropy of conducting p states and B-11 nuclear spin-lattice relaxationin Mg1-xAlxB2 - art. no. 132506
Authors: Belashchenko, KD Antropov, VP Rashkeev, SN
Citation: Kd. Belashchenko et al., Anisotropy of conducting p states and B-11 nuclear spin-lattice relaxationin Mg1-xAlxB2 - art. no. 132506, PHYS REV B, 6413(13), 2001, pp. 2506
Second-harmonic generation of I-III-VI2 chalcopyrite semiconductors: Effects of chemical substitutions - art. no. 165212
Authors: Rashkeev, SN Lambrecht, WRL
Citation: Sn. Rashkeev et Wrl. Lambrecht, Second-harmonic generation of I-III-VI2 chalcopyrite semiconductors: Effects of chemical substitutions - art. no. 165212, PHYS REV B, 6316(16), 2001, pp. 5212
Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506
Authors: Rashkeev, SN Fleetwood, DM Schrimpf, RD Pantelides, ST
Citation: Sn. Rashkeev et al., Defect generation by hydrogen at the Si-SiO2 interface - art. no. 165506, PHYS REV L, 8716(16), 2001, pp. 5506
Hydrogen passivation and activation of oxygen complexes in silicon
Authors: Rashkeev, SN Di Ventra, M Pantelides, ST
Citation: Sn. Rashkeev et al., Hydrogen passivation and activation of oxygen complexes in silicon, APPL PHYS L, 78(11), 2001, pp. 1571-1573
From band structures to linear and nonlinear optical spectra in semiconductors
Authors: Lambrecht, WRL Rashkeev, SN
Citation: Wrl. Lambrecht et Sn. Rashkeev, From band structures to linear and nonlinear optical spectra in semiconductors, PHYS ST S-B, 217(1), 2000, pp. 599-640
Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation
Authors: Marka, Z Singh, SK Wang, W Lee, SC Kavich, J Glebov, B Rashkeev, SN Karmarkar, AP Albridge, RG Pantelides, ST Schrimpf, RD Fleetwood, DM Tolk, NH
Citation: Z. Marka et al., Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation, IEEE NUCL S, 47(6), 2000, pp. 2256-2261
Reactions of hydrogen with Si-SiO2 interfaces
Authors: Pantelides, ST Rashkeev, SN Buczko, R Fleetwood, DM Schrimpf, RD
Citation: St. Pantelides et al., Reactions of hydrogen with Si-SiO2 interfaces, IEEE NUCL S, 47(6), 2000, pp. 2262-2268
Strong enhancement of second-order response coefficients in tellurium containing Ag-III-VI2 compounds
Authors: Rashkeev, SN Lambrecht, WRL
Citation: Sn. Rashkeev et Wrl. Lambrecht, Strong enhancement of second-order response coefficients in tellurium containing Ag-III-VI2 compounds, APPL PHYS L, 77(2), 2000, pp. 190-192
Theoretical evaluation of LiGaO2 for frequency upconversion to ultraviolet
Authors: Rashkeev, SN Limpijumnong, S Lambrecht, WRL
Citation: Sn. Rashkeev et al., Theoretical evaluation of LiGaO2 for frequency upconversion to ultraviolet, J OPT SOC B, 16(12), 1999, pp. 2217-2222
Second-harmonic generation and birefringence of some ternary pnictide semiconductors
Authors: Rashkeev, SN Limpijumnong, S Lambrecht, WRL
Citation: Sn. Rashkeev et al., Second-harmonic generation and birefringence of some ternary pnictide semiconductors, PHYS REV B, 59(4), 1999, pp. 2737-2748
Optical-absorption bands in the 1-3 eV range in n-type SiC polytypes
Authors: Limpijumnong, S Lambrecht, WRL Rashkeev, SN Segall, B
Citation: S. Limpijumnong et al., Optical-absorption bands in the 1-3 eV range in n-type SiC polytypes, PHYS REV B, 59(20), 1999, pp. 12890-12899
Risultati: 1-12 |