Citation: G. Lucovsky et al., Chemical and physical limits on the performance of metal silicate high-k gate dielectrics, MICROEL REL, 41(7), 2001, pp. 937-945
Authors:
Lucovsky, G
Rayner, GB
Kang, D
Appel, G
Johnson, RS
Zhang, Y
Sayers, DE
Ade, H
Whitten, JL
Citation: G. Lucovsky et al., Electronic structure of noncrystalline transition metal silicate and aluminate alloys, APPL PHYS L, 79(12), 2001, pp. 1775-1777
Citation: G. Lucovsky et Gb. Rayner, Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys, APPL PHYS L, 77(18), 2000, pp. 2912-2914