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Results:
1-12
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Results: 12
Authors:
Hofmann, L
Rudloff, D
Rechenberg, I
Knauer, A
Christen, J
Weyers, M
Citation: L. Hofmann et al., (AlGa)As composition profile analysis of trenches overgrown with MOVPE, J CRYST GR, 222(3), 2001, pp. 465-470
Authors:
Klehr, A
Beister, G
Erbert, G
Klein, A
Maege, J
Rechenberg, I
Sebastian, J
Wenzel, H
Trankle, G
Citation: A. Klehr et al., Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes, J APPL PHYS, 90(1), 2001, pp. 43-47
Authors:
Tomm, JW
Thamm, E
Barwolff, A
Elsaesser, T
Luft, J
Baeumler, M
Mueller, S
Jantz, W
Rechenberg, I
Erbert, G
Citation: Jw. Tomm et al., Facet degradation of high-power diode laser arrays, APPL PHYS A, 70(4), 2000, pp. 377-381
Authors:
Brunner, F
Richter, E
Bergunde, T
Rechenberg, I
Bhattacharya, A
Maassdorf, A
Tomm, JW
Kurpas, P
Achouche, M
Wurfl, J
Weyers, M
Citation: F. Brunner et al., Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE, J ELEC MAT, 29(2), 2000, pp. 205-209
Authors:
Bugge, F
Knauer, A
Gramlich, S
Rechenberg, I
Beister, G
Sebastian, J
Wenzel, H
Erbert, G
Weyers, M
Citation: F. Bugge et al., MOVPE growth of AlGaAs/GaInP diode lasers, J ELEC MAT, 29(1), 2000, pp. 57-61
Authors:
Hahnert, I
Knauer, A
Schneider, R
Rechenberg, I
Klein, A
Neumann, W
Citation: I. Hahnert et al., {110} and {111} ordering in MOVPE-grown (Ga,In)P on (001) GaAs substrates at low temperature, CRYST RES T, 35(6-7), 2000, pp. 831-837
Authors:
Rechenberg, I
Citation: I. Rechenberg, Case studies in evolutionary experimentation and computation, COMPUT METH, 186(2-4), 2000, pp. 125-140
Authors:
Bugge, F
Zeimer, U
Gramlich, S
Rechenberg, I
Sebastian, J
Erbert, G
Weyers, M
Citation: F. Bugge et al., Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050 nm, J CRYST GR, 221, 2000, pp. 496-502
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Zeimer, U
Weyers, M
Citation: L. Hofmann et al., Comparison of binary and ternary growth over trenches using MOVPE, J CRYST GR, 213(3-4), 2000, pp. 229-234
Authors:
Rechenberg, I
Klehr, A
Richter, U
Erfurth, W
Bugge, F
Klein, A
Citation: I. Rechenberg et al., Interdiffusion-induced degradation of 1017 nm ridge waveguide laser diodes, J CRYST GR, 210(1-3), 2000, pp. 307-312
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Weyers, M
Stolz, W
Citation: L. Hofmann et al., Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy, J CRYST GR, 206(4), 1999, pp. 255-262
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Weyers, M
Citation: L. Hofmann et al., Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE), J CRYST GR, 195(1-4), 1998, pp. 485-489
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