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Results:
1-9
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Results: 9
Authors:
Lee, JY
Peters, S
Rein, S
Glunz, SW
Citation: Jy. Lee et al., Improvement of charge minority-carrier lifetime in p(boron)-type Czochralski silicon by rapid thermal annealing, PROG PHOTOV, 9(6), 2001, pp. 417-424
Authors:
Schmidt, J
Cuevas, A
Rein, S
Glunz, SW
Citation: J. Schmidt et al., Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells, PROG PHOTOV, 9(4), 2001, pp. 249-255
Authors:
Glunz, SW
Rein, S
Warta, W
Knobloch, J
Wettling, W
Citation: Sw. Glunz et al., Degradation of carrier lifetime in Cz silicon solar cells, SOL EN MAT, 65(1-4), 2001, pp. 219-229
Authors:
Saitoh, T
Wang, X
Hashigami, H
Abe, T
Igarashi, T
Glunz, S
Rein, S
Wettling, W
Yamasaki, I
Sawai, H
Ohtuka, H
Warabisako, T
Citation: T. Saitoh et al., Suppression of light degradation of carrier lifetimes in low-resistivity CZ-Si solar cells, SOL EN MAT, 65(1-4), 2001, pp. 277-285
Authors:
Glunz, SW
Rein, S
Lee, JY
Warta, W
Citation: Sw. Glunz et al., Minority carrier lifetime degradation in boron-doped Czochralski silicon, J APPL PHYS, 90(5), 2001, pp. 2397-2404
Authors:
Saitoh, T
Hashigami, H
Rein, S
Glunz, S
Citation: T. Saitoh et al., Overview of light degradation research on crystalline silicon solar cells, PROG PHOTOV, 8(5), 2000, pp. 537-547
Authors:
Glunz, SW
Koster, B
Leimenstoll, T
Rein, S
Schaffer, E
Knobloch, J
Abe, T
Citation: Sw. Glunz et al., 100 cm(2) solar cells on Czochralski silicon with an efficiency of 20 center dot 2%, PROG PHOTOV, 8(2), 2000, pp. 237-240
Authors:
Glunz, SW
Rein, S
Knobloch, J
Wettling, W
Abe, T
Citation: Sw. Glunz et al., Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application, PROG PHOTOV, 7(6), 1999, pp. 463-469
Authors:
Glunz, SW
Biro, D
Rein, S
Warta, W
Citation: Sw. Glunz et al., Field-effect passivation of the SiO2-Si interface, J APPL PHYS, 86(1), 1999, pp. 683-691
Risultati:
1-9
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