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Citation: K. Bharuth-ram et al., Implantation sites of In, Cd, and Hf ions in diamond - art. no. 195207, PHYS REV B, 6419(19), 2001, pp. 5207

Authors: Ronning, C Dalmer, M Uhrmacher, M Restle, M Vetter, U Ziegeler, L Hofsass, H Gehrke, T Jarrendahl, K Davis, RF

Citation: C. Ronning et al., Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery, J APPL PHYS, 87(5), 2000, pp. 2149-2157

Authors: Bharuth-Ram, K Restle, M Hofsass, H Ronning, C Wahl, U

Citation: K. Bharuth-ram et al., Lattice site and diffusion of ion-implanted Li in as-grown and Se-rich ZnSe, PHYSICA B, 274, 1999, pp. 875-878

Authors: Dalmer, M Vetter, U Restle, M Stotzler, A Hofsass, H Ronning, C Moodley, MK Bharuth-Ram, K

Citation: M. Dalmer et al., Combination of emission channeling, photoluminescence and Mossbauer spectroscopy to identify rare earth defect complexes in semiconductors, HYPER INTER, 121(1-8), 1999, pp. 347-352

Authors: Bharuth-Ram, K Hofsass, H Restle, M Wahl, U

Citation: K. Bharuth-ram et al., Emission channeling studies of defect annealing in the wide band gap semiconductors ZnTe and ZnSe, NUCL INST B, 156(1-4), 1999, pp. 244-251