Citation: Wj. Lee et al., Thermally stable tungsten bit-line process flow for the capacitor over bit-line-type dynamic random-access memory, JPN J A P 1, 39(6A), 2000, pp. 3344-3348
Authors:
Cho, WJ
Hong, JE
Jin, WH
Lee, KS
Rha, SK
Kim, SK
Citation: Wj. Cho et al., Improvement of sheet resistance and gate oxide integrity using phosphorus ion implantation in tungsten polycide gate, SOL ST ELEC, 44(3), 2000, pp. 393-399