Citation: Sw. Rhee et al., Synthesis, structures and electrochemical characterization of ferrocene-substituted porphyrin and porphodimethene, INORG CHIM, 309(1-2), 2000, pp. 49-56
Citation: Hu. Kim et Sw. Rhee, Electrical properties of bulk silicon dioxide and SiO2/Si interface formedby tetraethylorthosilicate-ozone chemical vapor deposition, J ELCHEM SO, 147(4), 2000, pp. 1473-1476
Citation: Jh. Lee et al., Comparison of (Ba,Sr)TiO3 thin films from metallorganic chemical vapor deposition with Ti(dmae)(4) and Ti(i-OPr)(2)(tmhd)(2) as Ti sources, EL SOLID ST, 2(10), 1999, pp. 507-509
Citation: Jh. Lee et Sw. Rhee, Chemical vapor deposition of barium strontium titanate thin films by the direct liquid injection of Ba(methd)(2), Sr(methd)(2), and Ti(mpd)(tmhd)(2) without solvent, EL SOLID ST, 2(10), 1999, pp. 510-511
Citation: Sw. Kang et al., Hexafluoroacetylacetonate Cu vinylcyclohexane as a liquid precursor for low-temperature chemical vapor deposition of copper thin films, EL SOLID ST, 2(1), 1999, pp. 22-23
Citation: Dh. Kim et al., Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane, J MAT S-M E, 10(4), 1999, pp. 285-290
Citation: Yb. Park et al., Effects of annealing in O-2 and N-2 on the microstructure of metal organicchemical vapor deposition Ta2O5 film and the interfacial SiO2 layer, J MAT S-M E, 10(2), 1999, pp. 113-119
Citation: My. Park et al., Comparison of (hexafluoroacetylacetonate) Cu(vinyltrimethylsilane) and (hexafluoroacetylacetonate) Cu(allyltrimethylsilane) for metalorganic chemicalvapor deposition of copper, J MATER RES, 14(3), 1999, pp. 975-979
Citation: Jh. Lee et Sw. Rhee, Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a single cocktail solution with Ba(methd)(2), Sr(methd)(2), and Ti(MPD)(tmhd)(2), J MATER RES, 14(10), 1999, pp. 3988-3994
Citation: Jh. Lee et al., Metalorganic chemical vapor deposition of barium strontium titanate thin films with a more coordinatively saturated Ti precursor, Ti(dmae)(4)(dmae= dimethylaminoethoxide), J VAC SCI A, 17(5), 1999, pp. 3033-3037
Citation: Jh. Lee et al., Chemical vapor deposition of barium strontium titanate films using a single mixture of metalorganic precursors, J VAC SCI A, 17(5), 1999, pp. 3115-3117
Citation: Sw. Kang et al., (hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1pentene) and(hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) for the chemical vapor deposition of copper film, THIN SOL FI, 350(1-2), 1999, pp. 10-13
Citation: Jh. Lee et al., The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reaction, THIN SOL FI, 348(1-2), 1999, pp. 130-133
Citation: Yb. Park et al., Remote plasma chemical vapour deposition of silicon films at low temperature with H-2 and He plasma gases, J PHYS D, 32(16), 1999, pp. 1955-1962
Citation: Yb. Park et Sw. Rhee, Microstructure and interfacial states of silicon dioxide film grown by lowtemperature remote plasma enhanced chemical vapor deposition, J APPL PHYS, 86(3), 1999, pp. 1346-1354
Citation: Jy. Yun et al., Comparison of tetrakis(dimethylamido)titanium and tetrakis(diethylamido)titanium as precursors for metallorganic chemical vapor deposition of titanium nitride, J ELCHEM SO, 146(5), 1999, pp. 1804-1808
Citation: Jh. Lee et Sw. Rhee, Chemical vapor deposition of barium strontium titanate films with direct liquid injection of single-mixture solution, J ELCHEM SO, 146(10), 1999, pp. 3783-3787
Citation: My. Park et al., Chemical vapor deposition of copper thin films with (hexafluoroacetylacetonate)Cu(allyltrimethylsilane), EL SOLID ST, 1(1), 1998, pp. 32-33
Citation: Sw. Rhee et Jh. Yun, Surface passivation technique for selective hole filling by chemical vapordeposition, J MAT SCI L, 17(11), 1998, pp. 947-949