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Results: 26-50/51

Authors: Geller, MR Thouless, DJ Rhee, SW Vinen, WF
Citation: Mr. Geller et al., Iordanskii and Lifshitz-Pitaevskii forces in the two-fluid model, J L TEMP PH, 121(5-6), 2000, pp. 411-416

Authors: Rhee, SW Na, YH Do, Y Kim, J
Citation: Sw. Rhee et al., Synthesis, structures and electrochemical characterization of ferrocene-substituted porphyrin and porphodimethene, INORG CHIM, 309(1-2), 2000, pp. 49-56

Authors: Kim, HU Rhee, SW
Citation: Hu. Kim et Sw. Rhee, Electrical properties of bulk silicon dioxide and SiO2/Si interface formedby tetraethylorthosilicate-ozone chemical vapor deposition, J ELCHEM SO, 147(4), 2000, pp. 1473-1476

Authors: Brissonneau, L Kacheva, A Senocq, F Kang, JK Rhee, SW Gleizes, A Vahlas, C
Citation: L. Brissonneau et al., MOCVD of Ni and Ni3C films from Ni(dmen)(2)(tfa)(2), J PHYS IV, 9(P8), 1999, pp. 597-604

Authors: Lee, JH Kim, JY Rhee, SW Rhee, W
Citation: Jh. Lee et al., Chemical vapor deposition of RuO2 thin films using the liquid precursor Ru(OD)(3), EL SOLID ST, 2(12), 1999, pp. 622-623

Authors: Lee, JH Kim, JY Rhee, SW
Citation: Jh. Lee et al., Comparison of (Ba,Sr)TiO3 thin films from metallorganic chemical vapor deposition with Ti(dmae)(4) and Ti(i-OPr)(2)(tmhd)(2) as Ti sources, EL SOLID ST, 2(10), 1999, pp. 507-509

Authors: Lee, JH Rhee, SW
Citation: Jh. Lee et Sw. Rhee, Chemical vapor deposition of barium strontium titanate thin films by the direct liquid injection of Ba(methd)(2), Sr(methd)(2), and Ti(mpd)(tmhd)(2) without solvent, EL SOLID ST, 2(10), 1999, pp. 510-511

Authors: Kang, SW Park, MY Rhee, SW
Citation: Sw. Kang et al., Hexafluoroacetylacetonate Cu vinylcyclohexane as a liquid precursor for low-temperature chemical vapor deposition of copper thin films, EL SOLID ST, 2(1), 1999, pp. 22-23

Authors: Kang, SW Kim, HU Rhee, SW
Citation: Sw. Kang et al., Dry etching of copper film with hexafluoroacetylacetone via oxidation process, J VAC SCI B, 17(1), 1999, pp. 154-157

Authors: Kim, DH Park, MY Rhee, SW
Citation: Dh. Kim et al., Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane, J MAT S-M E, 10(4), 1999, pp. 285-290

Authors: Park, YB Li, XD Nam, GJ Rhee, SW
Citation: Yb. Park et al., Effects of annealing in O-2 and N-2 on the microstructure of metal organicchemical vapor deposition Ta2O5 film and the interfacial SiO2 layer, J MAT S-M E, 10(2), 1999, pp. 113-119

Authors: Park, MY Son, JH Kang, SW Rhee, SW
Citation: My. Park et al., Comparison of (hexafluoroacetylacetonate) Cu(vinyltrimethylsilane) and (hexafluoroacetylacetonate) Cu(allyltrimethylsilane) for metalorganic chemicalvapor deposition of copper, J MATER RES, 14(3), 1999, pp. 975-979

Authors: Lee, JH Rhee, SW
Citation: Jh. Lee et Sw. Rhee, Chemical vapor deposition of barium strontium titanate thin films using direct liquid injection of a single cocktail solution with Ba(methd)(2), Sr(methd)(2), and Ti(MPD)(tmhd)(2), J MATER RES, 14(10), 1999, pp. 3988-3994

Authors: Lee, JH Kim, JY Shim, JY Rhee, SW
Citation: Jh. Lee et al., Metalorganic chemical vapor deposition of barium strontium titanate thin films with a more coordinatively saturated Ti precursor, Ti(dmae)(4)(dmae= dimethylaminoethoxide), J VAC SCI A, 17(5), 1999, pp. 3033-3037

Authors: Lee, JH Park, M Rhee, SW
Citation: Jh. Lee et al., Chemical vapor deposition of barium strontium titanate films using a single mixture of metalorganic precursors, J VAC SCI A, 17(5), 1999, pp. 3115-3117

Authors: Kang, SW Han, SH Rhee, SW
Citation: Sw. Kang et al., (hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1pentene) and(hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) for the chemical vapor deposition of copper film, THIN SOL FI, 350(1-2), 1999, pp. 10-13

Authors: Lee, JH Park, MY Yun, JH Rhee, SW
Citation: Jh. Lee et al., The effect of additives on the viscosity of dimethylaluminum hydride and FTIR diagnostics of the gas-phase reaction, THIN SOL FI, 348(1-2), 1999, pp. 130-133

Authors: Yun, JH Rhee, SW
Citation: Jh. Yun et Sw. Rhee, Feature scale simulation of selective chemical vapor deposition process, THIN SOL FI, 339(1-2), 1999, pp. 270-276

Authors: Kang, MJ Chun, KS Rhee, SW Do, Y
Citation: Mj. Kang et al., Comparison of sorption behavior of I- and TcO4- on Mg/Al layered double hydroxide, RADIOCH ACT, 85(1-2), 1999, pp. 57-63

Authors: Park, YB Li, XD Rhee, SW Park, DW
Citation: Yb. Park et al., Remote plasma chemical vapour deposition of silicon films at low temperature with H-2 and He plasma gases, J PHYS D, 32(16), 1999, pp. 1955-1962

Authors: Park, YB Rhee, SW
Citation: Yb. Park et Sw. Rhee, Microstructure and interfacial states of silicon dioxide film grown by lowtemperature remote plasma enhanced chemical vapor deposition, J APPL PHYS, 86(3), 1999, pp. 1346-1354

Authors: Yun, JY Park, MY Rhee, SW
Citation: Jy. Yun et al., Comparison of tetrakis(dimethylamido)titanium and tetrakis(diethylamido)titanium as precursors for metallorganic chemical vapor deposition of titanium nitride, J ELCHEM SO, 146(5), 1999, pp. 1804-1808

Authors: Lee, JH Rhee, SW
Citation: Jh. Lee et Sw. Rhee, Chemical vapor deposition of barium strontium titanate films with direct liquid injection of single-mixture solution, J ELCHEM SO, 146(10), 1999, pp. 3783-3787

Authors: Park, MY Son, JH Rhee, SW
Citation: My. Park et al., Chemical vapor deposition of copper thin films with (hexafluoroacetylacetonate)Cu(allyltrimethylsilane), EL SOLID ST, 1(1), 1998, pp. 32-33

Authors: Rhee, SW Yun, JH
Citation: Sw. Rhee et Jh. Yun, Surface passivation technique for selective hole filling by chemical vapordeposition, J MAT SCI L, 17(11), 1998, pp. 947-949
Risultati: 1-25 | 26-50 | 51-51