Authors: Rinta-Moykky, A Uusimaa, P Suhonen, S Valden, M Salokatve, A Pessa, M Likonen, J

Citation: A. Rinta-moykky et al., Study of ohmic multilayer metal contacts to p-type ZnSe, J VAC SCI A, 17(2), 1999, pp. 347-353

Authors: Rinta-Moykky, A Laukkanen, P Lehkonen, S Laaksonen, S Dekker, J Tukiainen, A Uusimaa, P Pessa, M

Citation: A. Rinta-moykky et al., Plasma-assisted MBE growth of GaN on HVPE-GaN substrates, PHYS ST S-A, 176(1), 1999, pp. 465-468

Authors: Uusimaa, P Sipila, P Saarinen, M Toikkanen, L Rinta-Moykky, A Pessa, M

Citation: P. Uusimaa et al., Molecular beam epitaxy growth of MgZnSSe/ZnSSe/CdZnSe microcavity light-emitting diodes using in situ reflectance monitoring, J CRYST GR, 202, 1999, pp. 1032-1035

Authors: Souifi, A Adhiri, R Le Dantec, R Guillot, G Uusimaa, P Rinta-Moykky, A Pessa, M

Citation: A. Souifi et al., ZnSe GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements, J APPL PHYS, 85(11), 1999, pp. 7759-7763