Authors:
Huang, D
Yun, F
Reshchikov, MA
Wang, D
Morkoc, H
Rode, DL
Farina, LA
Kurdak, C
Tsen, KT
Park, SS
Lee, KY
Citation: D. Huang et al., Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy, SOL ST ELEC, 45(5), 2001, pp. 711-715