Authors: Zhang, W Roesel, S Alves, HR Meister, D Kriegseis, W Hofmann, DM Meyer, BK Riemann, T Veit, P Blaesing, J Krost, A Christen, J

Citation: W. Zhang et al., Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation, APPL PHYS L, 78(6), 2001, pp. 772-774