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Results:
1-14
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Results: 14
Authors:
Romanato, F
Di Fabrizio, E
Vaccari, L
Altissimo, M
Cojoc, D
Businaro, L
Cabrini, S
Citation: F. Romanato et al., LILIT beamline for soft and deep X-ray lithography at Elettra, MICROEL ENG, 57-8, 2001, pp. 101-107
Authors:
Tormen, M
De Salvador, D
Drigo, AV
Romanato, F
Boscherini, F
Mobilio, S
Citation: M. Tormen et al., Lattice distortion in InxGa1-xAs/InP epitaxial films: A second- and third-shell XAFS study - art. no. 115326, PHYS REV B, 6311(11), 2001, pp. 5326
Authors:
De Salvador, D
Tormen, M
Berti, M
Drigo, AV
Romanato, F
Boscherini, F
Stangl, J
Zerlauth, S
Bauer, G
Colombo, L
Mobilio, S
Citation: D. De Salvador et al., Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure - art. no. 045314, PHYS REV B, 6304(4), 2001, pp. 5314
Authors:
Wilhein, T
Kaulich, B
Di Fabrizio, E
Romanato, F
Cabrini, S
Susini, J
Citation: T. Wilhein et al., Differential interference contrast x-ray microscopy with submicron resolution, APPL PHYS L, 78(14), 2001, pp. 2082-2084
Authors:
Romanato, F
Natali, M
Napolitani, E
Drigo, A
Citation: F. Romanato et al., Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution, MICRON, 31(3), 2000, pp. 277-283
Authors:
Natali, M
Romanato, F
Napolitani, E
De Salvador, D
Drigo, AV
Citation: M. Natali et al., Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers, PHYS REV B, 62(16), 2000, pp. 11054-11062
Authors:
De Salvador, D
Petrovich, M
Berti, M
Romanato, F
Napolitani, E
Drigo, A
Stangl, J
Zerlauth, S
Muhlberger, M
Schaffler, F
Bauer, G
Kelires, PC
Citation: D. De Salvador et al., Lattice parameter of Si1-x-yGexCy alloys, PHYS REV B, 61(19), 2000, pp. 13005-13013
Authors:
Boscherini, F
Pascarelli, S
Lamberti, C
Mobilio, S
Romanato, F
DeSalvador, D
Tormen, M
Natali, M
Drigo, A
Citation: F. Boscherini et al., Local structure in semiconductor superlattices and epilayers, J SYNCHROTR, 6, 1999, pp. 506-508
Authors:
Di Fabrizio, E
Romanato, F
Gentili, M
Cabrini, S
Kaulich, B
Susini, J
Barrett, R
Citation: E. Di Fabrizio et al., High-efficiency multilevel zone plates for keV X-rays, NATURE, 401(6756), 1999, pp. 895-898
Authors:
Ferrari, C
Gennari, S
Franchi, S
Lazzarini, L
Natali, M
Romanato, F
Drigo, AV
Baruchel, J
Citation: C. Ferrari et al., Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers, J CRYST GR, 205(4), 1999, pp. 474-480
Authors:
Romanato, F
Napolitani, E
Carnera, A
Drigo, AV
Lazzarini, L
Salviati, G
Ferrari, C
Bosacchi, A
Franchi, S
Citation: F. Romanato et al., Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers, J APPL PHYS, 86(9), 1999, pp. 4748-4755
Authors:
Tormen, M
De Salvador, D
Natali, M
Drigo, A
Romanato, F
Rossetto, G
Boscherini, F
Mobilio, S
Citation: M. Tormen et al., Bond length variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness, J APPL PHYS, 86(5), 1999, pp. 2533-2539
Authors:
Muller, BH
Lantier, R
Sorba, L
Heun, S
Rubini, S
Lazzarino, M
Franciosi, A
Napolitani, E
Romanato, F
Drigo, AV
Lazzarini, L
Salviati, G
Citation: Bh. Muller et al., Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers, J APPL PHYS, 85(12), 1999, pp. 8160-8169
Authors:
Romanato, F
De Salvador, D
Berti, M
Drigo, A
Natali, M
Tormen, M
Rossetto, G
Pascarelli, S
Boscherini, F
Lamberti, C
Mobilio, S
Citation: F. Romanato et al., Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57,pg 14 619, 1998), PHYS REV B, 58(19), 1998, pp. 13277-13277
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