Authors: Royea, WJ Michalak, DJ Lewis, NS

Citation: Wj. Royea et al., Role of inversion layer formation in producing low effective surface recombination velocities at Si/liquid contacts, APPL PHYS L, 77(16), 2000, pp. 2566-2568

Authors: Royea, WJ Juang, A Lewis, NS

Citation: Wj. Royea et al., Preparation of air-stable, low recombination velocity Si(111) surfaces through alkyl termination, APPL PHYS L, 77(13), 2000, pp. 1988-1990

Authors: Sturzenegger, M Prokopuk, N Kenyon, CN Royea, WJ Lewis, NS

Citation: M. Sturzenegger et al., Reactions of etched, single crystal (111)B-oriented InP to produce functionalized surfaces with low electrical defect densities, J PHYS CH B, 103(49), 1999, pp. 10838-10849