Authors: Rydberg, M Smith, U

Citation: M. Rydberg et U. Smith, Long-term stability and electrical properties of fluorine doped polysilicon IC-resistors, MAT SC S PR, 4(4), 2001, pp. 373-382

Authors: Rydberg, M Smith, U

Citation: M. Rydberg et U. Smith, Temperature coefficient of resistivity in heavily doped oxygen-rich polysilicon, J ELCHEM SO, 148(12), 2001, pp. G725-G733

Authors: Rydberg, M Smith, U Sjodin, H

Citation: M. Rydberg et al., Effect of post-nitride-passivation processing on the long-term stability of polysilicon integrated circuit resistors, J VAC SCI B, 18(2), 2000, pp. 690-694

Authors: Rydberg, M Smith, U

Citation: M. Rydberg et U. Smith, Long-term stability and electrical properties of compensation doped poly-Si IC-resistors, IEEE DEVICE, 47(2), 2000, pp. 417-426

Authors: Rydberg, M Smith, U

Citation: M. Rydberg et U. Smith, Influence on the long-term stability of polysilicon resistors from traces of titanium and tungsten, J ELCHEM SO, 147(9), 2000, pp. 3487-3493