Authors: OSTROVSKII IV SAIKO SV WALTHER HG

Citation: Iv. Ostrovskii et al., DETERMINATION OF DEEP LEVELS PARAMETERS IN EPI-GAAS BY A TRANSIENT ACOUSTOELECTRIC TECHNIQUE, Journal of physics. D, Applied physics (Print), 31(18), 1998, pp. 2319-2325

Authors: OSTROVSKII IV SAIKO SV

Citation: Iv. Ostrovskii et Sv. Saiko, TRAPPING AND RELAXATION OF CHARGE AT STRUCTURAL DEFECTS IN EPITAXIAL GALLIUM-ARSENIDE, Semiconductors, 30(9), 1996, pp. 857-860

Authors: OSTROVSKII IV SAIKO SV SAVKINA RK

Citation: Iv. Ostrovskii et al., RELAXATION OF TRANSVERSE ACOUSTOELECTRIC VOLTAGE IN EPITAXIAL GAAS STRUCTURES, Semiconductors, 28(5), 1994, pp. 467-469

Authors: OSTROVSKII IV SAIKO SV

Citation: Iv. Ostrovskii et Sv. Saiko, SURFACE-STATE SPECTROSCOPY IN GAAS USING THE ACOUSTOELECTRIC EFFECT, Fizika tverdogo tela, 35(4), 1993, pp. 1043-1050

Authors: OSTROVSKY IV SAIKO SV

Citation: Iv. Ostrovsky et Sv. Saiko, ACOUSTOELECTRIC SPECTROSCOPY OF GAAS SURF ACE, UKRAINSKII FIZICHESKII ZHURNAL, 38(10), 1993, pp. 1544-1546