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Results:
1-8
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Results: 8
Authors:
SARKISSIAN AH
BOURQUEVIENS A
PAYNTER RW
SAINTJACQUES RG
STANSFIELD BL
Citation: Ah. Sarkissian et al., CHARACTERIZATION OF DIFFUSED ECR PLASMA - APPLICATION TO PULSED PLASMA ION-IMPLANTATION OF NITROGEN IN TITANIUM, Surface & coatings technology, 98(1-3), 1998, pp. 1336-1340
Authors:
VALDES MU
SAINTJACQUES RG
COTE JF
MOREAU C
Citation: Mu. Valdes et al., HIGH HEAT LOAD TESTING OF PLASMA-SPRAYED W-COATINGS, Journal of nuclear materials, 241, 1997, pp. 750-754
Authors:
SANTERRE F
COTE R
VEILLEUX G
SAINTJACQUES RG
DODELET JP
Citation: F. Santerre et al., HIGHLY PHOTOACTIVE MOLECULAR SEMICONDUCTORS - DETERMINATION OF THE ESSENTIAL PARAMETERS THAT LEAD TO AN IMPROVED PHOTOACTIVITY FOR MODIFIEDCHLOROALUMINUM PHTHALOCYANINE THIN-FILMS, Journal of physical chemistry, 100(18), 1996, pp. 7632-7645
Authors:
GUELTON N
SAINTJACQUES RG
LALANDE G
DODELET JP
Citation: N. Guelton et al., MICROSTRUCTURAL STUDY OF GAAS EPITAXIAL LAYERS ON GE(100) SUBSTRATES, Journal of materials research, 10(4), 1995, pp. 843-852
Authors:
BURLE N
PICHAUD B
GUELTON N
SAINTJACQUES RG
Citation: N. Burle et al., X-RAY STUDY OF RELAXATION PROCESS OF STRAINED GAAS-LAYERS GROWN ON (100) GE SUBSTRATES, Thin solid films, 260(1), 1995, pp. 65-74
Authors:
BURLE N
PICHAUD B
GUELTON N
SAINTJACQUES RG
Citation: N. Burle et al., X-RAY TOPOGRAPHIC IDENTIFICATION OF DISLOCATION NUCLEATION MECHANISMSIN THE HETEROEPITAXIAL SYSTEM GAAS GE/, Physica status solidi. a, Applied research, 149(1), 1995, pp. 123-129
Authors:
TERREAULT B
KEROACK D
ROSS GG
SAINTJACQUES RG
SCHIETTEKATTE F
TOUHOUCHE K
ZHENG P
Citation: B. Terreault et al., HIGH-TEMPERATURE H AND D BEHAVIOR IN SOLID AND LIQUID BERYLLIUM, Journal of nuclear materials, 222, 1995, pp. 790-794
Authors:
LALANDE G
GUELTON N
COSSEMENT D
SAINTJACQUES RG
DODELET JP
Citation: G. Lalande et al., OPTIMUM GROWTH-CONDITIONS FOR THE EPITAXY OF GAAS ON GE BY CLOSE-SPACED VAPOR TRANSPORT, Canadian journal of physics, 72(5-6), 1994, pp. 225-232
Risultati:
1-8
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