Authors: SAMANTA P SARKAR CK

Citation: P. Samanta et Ck. Sarkar, A NEW APPROACH TO INVESTIGATE GATE OXIDE DEGRADATION OF MOS CAPACITORS DURING FOWLER-NORDHEIM STRESS AT LOW ELECTRON FLUENCE, Solid-state electronics, 42(1), 1998, pp. 165-171

Authors: SAMANTA P SARKAR CK

Citation: P. Samanta et Ck. Sarkar, COUPLED CHARGE TRAPPING DYNAMICS IN THIN SIO2 GATE OXIDE UNDER FOWLER-NORDHEIM-STRESS AT LOW ELECTRON FLUENCE, Journal of applied physics, 83(5), 1998, pp. 2662-2669

Authors: SAMANTA P SARKAR CK

Citation: P. Samanta et Ck. Sarkar, ANALYSIS OF POSITIVE CHARGE TRAPPING IN SILICON DIOXIDE OF MOS CAPACITORS DURING FOWLER-NORDHEIM STRESS, Solid-state electronics, 41(3), 1997, pp. 459-464

Authors: SAMANTA P SARKAR CK

Citation: P. Samanta et Ck. Sarkar, HOLE TRAPPING IN THIN GATE OXIDES DURING FOWLER-NORDHEIM CONSTANT-CURRENT STRESS, Semiconductor science and technology, 11(2), 1996, pp. 181-186

Authors: SAMANTA P SARKAR CK

Citation: P. Samanta et Ck. Sarkar, POSITIVE CHARGE TRAPPING IN THIN GATE OXIDES OF MOS CAPACITORS DURINGCONSTANT-CURRENT AND VOLTAGE FOWLER-NORDHEIM STRESS, Physica status solidi. a, Applied research, 151(2), 1995, pp. 501-511

Authors: STOCK D VESELY W SAMANTA P

Citation: D. Stock et al., MODELING THE DEGRADATION OF NUCLEAR-COMPONENTS, IEEE transactions on nuclear science, 41(4), 1994, pp. 1405-1407