Authors: GRAHN JV PEJNEFORS J SANDEN M ZHANG SL OSTLING M

Citation: Jv. Grahn et al., CHARACTERIZATION OF IN-SITU PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS GROWN BY DISILANE-BASED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3952-3958