AAAAAA

   
Results: 1-10 |
Results: 10
OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY
Authors: SARAVANAN S JEGANATHAN K AROKIARAJ J BASKAR K RAMASAMY P JIMBO T SOGA T UMENO M
Citation: S. Saravanan et al., OPTICAL AND STRUCTURAL QUALITY OF GAAS EPILAYERS FROM GALLIUM, BISMUTH MIXED-SOLVENTS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 37(5A), 1998, pp. 2598-2601
INVESTIGATIONS OF A RAPID THERMAL ANNEALED AL0.15GA0.85AS SI STRUCTURE/
Authors: SARAVANAN S AROKIARAJ J JIMBO T SOGA T UMENO M
Citation: S. Saravanan et al., INVESTIGATIONS OF A RAPID THERMAL ANNEALED AL0.15GA0.85AS SI STRUCTURE/, JPN J A P 2, 37(5A), 1998, pp. 496-498
ON THE BISMUTH COMPOSITION DEPENDENT CONCENTRATION OF ARSENIC ATOMS DURING LPE GROWTH OF GAAS-LAYERS FROM GA-AS-BI SOLUTION
Authors: JEGANATHAN K SARAVANAN S BASKAR K KUMAR J
Citation: K. Jeganathan et al., ON THE BISMUTH COMPOSITION DEPENDENT CONCENTRATION OF ARSENIC ATOMS DURING LPE GROWTH OF GAAS-LAYERS FROM GA-AS-BI SOLUTION, Physica status solidi. a, Applied research, 165(2), 1998, pp. 437-443
CRYSTAL-GROWTH OF HIGH-QUALITY HYBRID GAAS HETEROEPITAXIAL LAYERS ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND LIQUID-PHASE EPITAXY
Authors: SARAVANAN S JEGANATHAN K BASKAR K JIMBO T SOGA T UMENO M
Citation: S. Saravanan et al., CRYSTAL-GROWTH OF HIGH-QUALITY HYBRID GAAS HETEROEPITAXIAL LAYERS ON SI SUBSTRATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND LIQUID-PHASE EPITAXY, Journal of crystal growth, 192(1-2), 1998, pp. 23-27
HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN FROM GA-AS-BI SOLUTIONS BY LIQUID-PHASE EPITAXY
Authors: SARAVANAN S JEGANATHAN K BASKAR K KUMAR J SUBRAMANIAN C SOGA T JIMBO T ARORA BM UMENO M
Citation: S. Saravanan et al., HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN FROM GA-AS-BI SOLUTIONS BY LIQUID-PHASE EPITAXY, JPN J A P 1, 36(6A), 1997, pp. 3385-3388
INVESTIGATIONS ON THE CONCENTRATION PROFILES OF ARSENIC ATOMS DURING PHASE EPITAXIAL-GROWTH OF GAAS FROM GA-AS-BI SOLUTION
Authors: JEGANATHAN K SARAVANAN S BASKAR K KUMAR J
Citation: K. Jeganathan et al., INVESTIGATIONS ON THE CONCENTRATION PROFILES OF ARSENIC ATOMS DURING PHASE EPITAXIAL-GROWTH OF GAAS FROM GA-AS-BI SOLUTION, Materials chemistry and physics, 49(2), 1997, pp. 141-145
A QUICK AND RELIABLE METHOD TO DETERMINE THE ORDER OF AN IRREVERSIBLEUNIMOLECULAR REACTION
Authors: SARAVANAN S SUBRAMANIAN P
Citation: S. Saravanan et P. Subramanian, A QUICK AND RELIABLE METHOD TO DETERMINE THE ORDER OF AN IRREVERSIBLEUNIMOLECULAR REACTION, Industrial & engineering chemistry research, 35(8), 1996, pp. 2766-2768
DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF UNDOPED AND SN-DOPED ALXGA1-XAS EPILAYERS GROWN BY LIQUID-PHASE EPITAXY
Authors: JOTHILINGAM R SARAVANAN S BASKAR K
Citation: R. Jothilingam et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF UNDOPED AND SN-DOPED ALXGA1-XAS EPILAYERS GROWN BY LIQUID-PHASE EPITAXY, Journal of materials science letters, 15(13), 1996, pp. 1132-1133
IMPROVE PIPING DESIGN
Authors: SARAVANAN S PREMALATHA M PUNITHA G SUBRAMANIAN P
Citation: S. Saravanan et al., IMPROVE PIPING DESIGN, Hydrocarbon processing, 75(5), 1996, pp. 59-61
GEOCHEMISTRY AND PETROGENESIS OF SHONKINITE AND ASSOCIATED ALKALINE, ROCKS OF TIRUPPATTUR CARBONATITE COMPLEX, TAMIL-NADU
Authors: SARAVANAN S RAMASAMY R
Citation: S. Saravanan et R. Ramasamy, GEOCHEMISTRY AND PETROGENESIS OF SHONKINITE AND ASSOCIATED ALKALINE, ROCKS OF TIRUPPATTUR CARBONATITE COMPLEX, TAMIL-NADU, Journal of the Geological Society of India, 46(3), 1995, pp. 235-243
Risultati: 1-10 |