Authors: SCHMIDT UI GRAVES DB

Citation: Ui. Schmidt et Db. Graves, IN-SITU CHARACTERIZATION OF THE TRANSIENT-BEHAVIOR OF PARTICLES IN LOW-PRESSURE PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 595-602

Authors: HAAGE T SCHMIDT UI SCHRODER B OECHSNER H

Citation: T. Haage et al., MODELING THE DIELECTRIC FUNCTION OF THIN-FILMS MEASURED BY SPECTROSCOPIC ELLIPSOMETRY - DETERMINATION OF MICROSTRUCTURE AND DENSITY, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 556-558

Authors: HAAGE T SCHMIDT UI FATH H HESS P SCHRODER B OECHSNER H

Citation: T. Haage et al., DENSITY OF GLOW-DISCHARGE AMORPHOUS-SILICON FILMS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY, Journal of applied physics, 76(8), 1994, pp. 4894-4896

Authors: SCHMIDT UI SCHRODER B OECHSNER H

Citation: Ui. Schmidt et al., IN-SITU ELLIPSOMETRIC STUDY OF THE INFLUENCE OF POWDER FORMATION ON THE INITIAL GROWTH OF GLOW-DISCHARGE A-SIH, Thin solid films, 233(1-2), 1993, pp. 297-300

Authors: SCHMIDT UI SCHRODER B OECHSNER H

Citation: Ui. Schmidt et al., INFLUENCE OF POWDER FORMATION IN A SILANE DISCHARGE ON A-SI-H FILM GROWTH MONITORED BY IN-SITU ELLIPSOMETRY, Journal of non-crystalline solids, 166, 1993, pp. 127-130