Authors: SCHMITZ AC PING AT KHAN MA CHEN Q YANG JW ADESIDA I

Citation: Ac. Schmitz et al., METAL CONTACTS TO N-TYPE GAN, Journal of electronic materials, 27(4), 1998, pp. 255-260

Authors: PING AT SCHMITZ AC ADESIDA I KHAN MA CHEN Q YANG JW

Citation: At. Ping et al., CHARACTERIZATION OF REACTIVE ION ETCHING-INDUCED DAMAGE TO N-GAN SURFACES USING SCHOTTKY DIODES, Journal of electronic materials, 26(3), 1997, pp. 266-271

Authors: PING AT SCHMITZ AC KHAN MA ADESIDA I

Citation: At. Ping et al., DRY-ETCHING OF GAN USING CHEMICALLY ASSISTED ION-BEAM ETCHING WITH HCL AND H-2 CL-2/, Journal of electronic materials, 25(5), 1996, pp. 825-829

Authors: SCHMITZ AC PING AT KHAN MA CHEN Q YANG JW ADESIDA I

Citation: Ac. Schmitz et al., SCHOTTKY-BARRIER PROPERTIES OF VARIOUS METALS ON N-TYPE GAN, Semiconductor science and technology, 11(10), 1996, pp. 1464-1467

Authors: SCHMITZ AC PING AT KHAN MA CHEN Q YANG JW ADESIDA I

Citation: Ac. Schmitz et al., HIGH-TEMPERATURE CHARACTERISTICS OF PD SCHOTTKY CONTACTS ON N-TYPE GAN, Electronics Letters, 32(19), 1996, pp. 1832-1833

Authors: PING AT SCHMITZ AC KHAN MA ADESIDA I

Citation: At. Ping et al., CHARACTERIZATION OF PD SCHOTTKY-BARRIER ON N-TYPE GAN, Electronics Letters, 32(1), 1996, pp. 68-70