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Results: 5

Authors: MARTINEZ EJ SHUR MS SCHUERMEYER FL
Citation: Ej. Martinez et al., GATE CURRENT MODEL FOR THE HOT-ELECTRON REGIME OF OPERATION IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2108-2115

Authors: MARTINEZ EJ SHUR MS SCHUERMEYER FL
Citation: Ej. Martinez et al., ANALYTICAL GATE CURRENT MODEL FOR N-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2116-2121

Authors: MERKEL KG CERNY CLA BRIGHT VM SCHUERMEYER FL MONAHAN TP LAREAU RT KASPI R RAI AK
Citation: Kg. Merkel et al., IMPROVED P-CHANNEL INALAS GAASSB HIGFET USING TI/PT/AU OHMIC CONTACTSTO BERYLLIUM IMPLANTED GAASSB/, Solid-state electronics, 39(2), 1996, pp. 179-191

Authors: MERKEL KG BRIGHT VM CERNY CLA SCHUERMEYER FL SOLOMON JS KASPI RA
Citation: Kg. Merkel et al., BERYLLIUM ION-IMPLANTATION IN GAASSB EPILAYERS ON INP, Journal of applied physics, 79(2), 1996, pp. 699-709

Authors: MARTINEZ MJ LOOK DC SIZELOVE JR SCHUERMEYER FL
Citation: Mj. Martinez et al., MONTE-CARLO SIMULATION OF BULK HOLE TRANSPORT IN ALXGA1-XAS, IN1-XALXAS, AND GAASXSB1-X, Journal of applied physics, 77(2), 1995, pp. 661-664
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