Citation: Ej. Martinez et al., GATE CURRENT MODEL FOR THE HOT-ELECTRON REGIME OF OPERATION IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2108-2115
Citation: Ej. Martinez et al., ANALYTICAL GATE CURRENT MODEL FOR N-CHANNEL HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2116-2121
Authors:
MARTINEZ MJ
LOOK DC
SIZELOVE JR
SCHUERMEYER FL
Citation: Mj. Martinez et al., MONTE-CARLO SIMULATION OF BULK HOLE TRANSPORT IN ALXGA1-XAS, IN1-XALXAS, AND GAASXSB1-X, Journal of applied physics, 77(2), 1995, pp. 661-664